NXP Semiconductors
BTA410-600CT
3Q Hi-Com Triac
BTA410-600CT All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 13 June 2014 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
2 - 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 50 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 60 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 50 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 35 mA
V
T
on-state voltage I
T
= 15 A; T
j
= 25 °C; Fig. 10 - 1.3 1.6 V
V
D
= 12 V; T
j
= 25 °C; Fig. 11 - 0.8 1 VV
GT
gate trigger voltage
V
D
= 400 V; T
j
= 150 °C; Fig. 11 0.25 0.4 - V
I
D
off-state current V
D
= 600 V; T
j
= 150 °C - 0.4 2 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
500 - - V/µs
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
8 - - A/ms
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 10 V/µs; gate open circuit
13 - - A/ms
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 1 V/µs; gate open circuit
20 - - A/ms