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PUMX1,115

P1-P3P4-P6P7-P9
PUMX1_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 20 January 2010 3 of 8
NXP Semiconductors
PUMX1
40 V, 100 mA NPN general-purpose double transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 416 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off current V
CB
=30V;
I
E
=0A
- - 100 nA
V
CB
=30V;
I
E
=0A;
T
j
= 150 °C
--10μA
I
EBO
emitter-base cut-off current V
EB
=4V;
I
C
=0A
- - 100 nA
h
FE
DC current gain V
CE
=6V;
I
C
=1mA
120 - -
V
CEsat
collector-emitter saturation
voltage
I
C
=50mA;
I
B
=5mA
[1]
- - 200 mV
f
T
transition frequency I
C
=2mA;
V
CE
=12V;
f=100MHz
100 - - MHz
C
c
collector capacitance V
CB
=12V;
I
E
=i
e
=0A;
f=1MHz
--1.5pF
PUMX1_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 20 January 2010 4 of 8
NXP Semiconductors
PUMX1
40 V, 100 mA NPN general-purpose double transistor
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
[2] T1: normal taping
[3] T2: reverse taping
Fig 1. Package outline PUMX1 (SOT363/SC-88)
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type
number
Package Description Packing quantity
3000 10000
PUMX1 SOT363 4 mm pitch, 8 mm tape and reel; T1
[2]
-115 -135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125 -165
PUMX1_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 20 January 2010 5 of 8
NXP Semiconductors
PUMX1
40 V, 100 mA NPN general-purpose double transistor
10. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PUMX1_4 20100120 Product data sheet - PUMX1_3
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 1 “Product overview”: added
• Section 1.2 “Features”: updated
• Section 1.3 “Applications”: amended
• Section 2 “Pinning information”: amended
• Figure 1: superseded by minimized package outline drawing
• Section 9 “Packing information”: added
• Section 11 “Legal information”: updated
PUMX1_3 19990414 Preliminary specification - PUMX1_2
PUMX1_2 19970709 Preliminary specification - PUMX1_1
P1-P3P4-P6P7-P9

PUMX1,115

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Manufacturer:
Nexperia
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Bipolar Transistors - BJT TRANS DOUBLE TAPE-7
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