OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2SK3484-AZ

P1-P3P4-P6P7-P9P10-P10
Data Sheet D15069EJ3V0DS
2
2SK3484
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V
Forward Transfer Admittance
Note
| y
fs | VDS = 10 V, ID = 8 A 4.7 9.5 S
Drain to Source On-state Resistance
Note
R
DS(on)1 VGS = 10 V, ID = 8 A 100 125 mΩ
RDS(on)2 VGS = 4.5 V, ID = 8 A 110 148 mΩ
Input Capacitance Ciss VDS = 10 V 900 pF
Output Capacitance Coss VGS = 0 V 110 pF
Reverse Transfer Capacitance Crss f = 1 MHz 50 pF
Turn-on Delay Time td(on) VDD = 50 V, ID = 8 A 9.0 ns
Rise Time tr VGS = 10 V 5.0 ns
Turn-off Delay Time td(off) RG = 0 Ω 30 ns
Fall Time tf 4.0 ns
Total Gate Charge QG VDD = 80 V 20 nC
Gate to Source Charge QGS VGS = 10 V 3.0 nC
Gate to Drain Charge QGD ID = 16 A 5.0 nC
Body Diode Forward Voltage
Note
V
F(S-D) IF = 16 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 16 A, VGS = 0 V 60 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
μ
s 122 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25 Ω
50 Ω
PG.
L
V
DD
V
GS
= 20 → 0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
μ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50 Ω
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D15069EJ3V0DS
3
2SK3484
TYPICAL CHARACTERISTICS (TA = 25°C)
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
08020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C - Case Temperature - ˚C
dT - Percentage of Rated Power - %
04020 60 100 14080 120 160
120
100
80
60
40
20
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10
100
R
th(ch-C)
= 4.17˚C/W
μ
μ
R
th(ch-A)
= 125˚C/W
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
100
0.1
1 10 100
T
C
= 25˚C
Single Pulse
1000
10 ms
I
D(pulse)
I
D(DC)
1 ms
100 μs
10 μs
R
DS(on)
Limited
(at V
GS
= 10 V)
Power Dissipation
Limited
DC
Data Sheet D15069EJ3V0DS
4
2SK3484
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10.1
250
200
150
100
50
0
10 100
Pulsed
V
GS
= 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate Cut-off Voltage - V
1
2
3
4
−50
0 50 100 150
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D - Drain Current - A
| yfs | - Forward Transfer Admittance - S
0.01 0.1
1
10
100
10 100
0.1
0.01
1
Pulsed
TA = 150˚C
75˚C
25˚C
−40˚C
V
DS = 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
5101520
200
150
100
50
0
8 A
I
D
= 16 A
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
23410
V
GS
=10 V
4.5 V
25
20
15
10
5
0
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1234
5
1
0.01
10
1
0.1
100
T
A
= −40˚C
25˚C
75˚C
150˚C
Pulsed
V
DS
= 10 V
P1-P3P4-P6P7-P9P10-P10

2SK3484-AZ

Mfr. #:
Buy 2SK3484-AZ
Manufacturer:
Renesas Electronics
Description:
MOSFET POWER TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet