STTH110A

This is information on a product in full production.
December 2013 DocID9344 Rev 3 1/8
STTH110
High voltage ultrafast rectifier
Datasheet - production data
Features
Low forwarded voltage drop
High reliability
High surge current capability
Soft switching for reduced EMI disturbances
Planar technology
Description
The STTH110, which is using ST ultrafast high
voltage planar technology, is especially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications.
K
K
K
A
A
A
SMA
(JEDEC DO-214AC)
STTH110A
DO-41
STTH110
Table 1. Device summary
Symbol Value
I
F(AV)
1 A
V
RRM
1000 V
T
j (max)
175 °C
V
F (max)
1.42 V
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Characteristics STTH110
2/8 DocID9344 Rev 3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.20 x I
F(AV)
+ 0.225 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1000 V
V
(RMS)
Voltage rms 700 V
I
F(AV)
Average forward current
SMA T
L
= 110 °C δ = 0.5 1
A
DO-41 T
L
= 125 °C δ = 0.5
1
I
FSM
Forward Surge current
t = 8.3 ms
SMA 18
A
DO-41 20
T
stg
Storage temperature range -50 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMA 30
°C/W
Lead length = 10 mm DO-41 45
R
th(j-a)
Junction to ambient
Lead length = 10 mm DO-41 110
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
Reverse leakage current
T
j
= 25 °C
V
R
= 1000 V
10
µA
T
j
= 125 °C 50
V
F
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
1.7
V
T
j
= 150 °C 0.98 1.42
Table 5. Dynamic electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 0.5, A
I
rr
= 0.25 A,
I
R
= 1 A
75 ns
t
fr
Forward recovery time
T
j
= 25 °C
I
F
= 1 A,
dI
F
/dt = 50 A/ms
V
FR
= 1.1 x V
F
max
300 ns
V
FP
Forward recovery
voltage
18 V
DocID9344 Rev 3 3/8
STTH110 Characteristics
8
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus forward
current (typical values)
P(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I (A)
F(AV)
δ
= 1
δ
= 0.05
δ
= 0.5
δ
= 0.2
δ
= 0.1
T
δ
=tp/T
tp
I (A)
FM
0.1
1.0
10.0
100.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V (V)
FM
T =25°C
j
(maximum values)
T =150°C
j
(maximum values)
T =150°C
j
(typical values)
Figure 3. Relative variation of thermal
impedance junction ambient versus pulse
duration (DO-41)
Figure 4. Relative variation of thermal
impedance junction ambient versus pulse
duration (SMA)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
T
δ
= tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
epoxy FR4, leads = 10 mm
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t (s)
p
T
δ =tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 5. Thermal resistance junction to
ambient versus copper surface under each lead
(DO-41)
Figure 6. Thermal resistance junction to
ambient versus copper surface under each lead
(SMA)
R (°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
120
012345678910
S(cm²)
epoxy printed circuit board FR4, copper thickness: 35 µm
R (°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(cm²)
epoxy printed circuit board FR4, copper thickness: 35 µm

STTH110A

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers 1.0 Amp 1000 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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