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BF422RL1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 4
Publication Order Number:
BF420/D
1
BF420, BF422
High Voltage Transistors
NPN Silicon
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol BF420 BF422 Unit
Collector−Emitter Voltage V
CEO
300 250 Vdc
Collector−Base Voltage V
CBO
300 250 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
50 mAdc
Collector Current − Peak I
CM
100 mA
Total Device Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
830
6.6
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
150
°C/W
Thermal Resistance,
Junction−to−Lead
R
q
JL
68
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on a FR4 board with 200 mm
2
of 1 oz copper and lead length of
5 mm.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAM
BF42x = Device Code
x = 0 or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
TO−92
CASE 29
STYLE 14
1
2
3
BF42x
AYWW G
G
Device Package Shipping
†
ORDERING INFORMATION
BF420ZL1 TO−92 2000/Ammo Box
BF422 TO−92
5000 Units/Box
BF422G TO−92
(Pb−Free)
5000 Units/Box
BF422RL1 TO−92 2000/Tape & Reel
BF422ZL1 TO−92 2000/Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
COLLECTOR
2
3
BASE
1
EMITTER
BF420ZL1G TO−92
(Pb−Free)
2000/Ammo Box
BF422RL1G TO−92
(Pb−Free)
2000/Tape & Reel
BF422ZL1G TO−92
(Pb−Free)
2000/Ammo Pack
(Note: Microdot may be in either location)
BF420, BF422
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0) BF420
BF422
V
(BR)CEO
300
250
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) BF420
BF422
V
(BR)CBO
300
250
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0) BF420
BF422
V
(BR)EBO
5.0
5.0
−
−
Vdc
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0) BF420
BF422
I
CBO
−
−
0.01
−
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0) BF420
BF422
I
EBO
−
−
100
−
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 25 mAdc, V
CE
= 20 Vdc) BF420
BF422
h
FE
50
50
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
CE(sat)
− 0.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
BE(sat)
− 2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 20 MHz)
f
T
60 −
MHz
Common Emitter Feedback Capacitance
(V
CB
= 30 Vdc, I
E
= 0, f = 1.0 MHz)
C
re
− 1.6
pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
BF420, BF422
http://onsemi.com
3
C, CAPACITANCE (pF)
Figure 1. DC Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10
1000
C
eb
@ 1MHz
Figure 2. Capacitance
I
C
, COLLECTOR CURRENT (mA)
10070503020107.05.03.02.0
80
70
50
30
20
10
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
f, CURRENT−GAIN  BANDWIDTH (MHz)
T
1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain − Bandwidth
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0
C
cb
@ 1MHz
60
40
V
BE(on)
@ 25°C, V
CE
= 10 V
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ −55°C, V
CE
= 10 V
Figure 4. ”ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
120
0.1 1.0
10
100
80
60
0
h
FE
, DC CURRENT GAIN
T
J
= +125°C
25°C
−55°C
V
CE
= 10 Vdc
100
20
40
P1-P3P4-P4

BF422RL1G

Mfr. #:
Buy BF422RL1G
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 250V 0.05A TO-92
Lifecycle:
New from this manufacturer.
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