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VS-HFA50PA60C-N3

P1-P3P4-P6P7-P7
VS-HFA50PA60CPbF, VS-HFA50PA60C-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
1
Document Number: 94074
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 25 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA50PA60C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 25 A
per leg continuous current, the VS-HFA50PA60C... is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA50PA60C... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
2 x 25 A
V
R
600 V
V
F
at I
F
1.3 V
t
rr
typ. 23 ns
T
J
max. 150 °C
Diode variation Common cathode
TO-247AC
1
2
3
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current
per leg
I
F
T
C
= 100 °C
25
A
per device 50
Single pulse forward current I
FSM
225
Maximum repetitive forward current I
FRM
100
Maximum power dissipation P
D
T
C
= 25 °C 150
W
T
C
= 100 °C 60
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA50PA60CPbF, VS-HFA50PA60C-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
2
Document Number: 94074
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 25 A
See fig. 1
-1.31.7
I
F
= 50 A - 1.5 2.0
I
F
= 25 A, T
J
= 125 °C - 1.3 1.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-1.520
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 600 2000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 55 100 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 12 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 23 -
nst
rr1
T
J
= 25 °C
I
F
= 25 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-5075
t
rr2
T
J
= 125 °C - 105 160
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 4.5 10
A
I
RRM2
T
J
= 125 °C - 8.0 15
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 112 375
nC
Q
rr2
T
J
= 125 °C - 420 1200
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 250 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 160 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Junction to case,
single leg conducting
R
thJC
- - 0.83
K/W
Junction to case,
both legs conducting
- - 0.42
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.25 -
Weight
-6.0- g
-0.21- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC HFA50PA60C
VS-HFA50PA60CPbF, VS-HFA50PA60C-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
3
Document Number: 94074
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.6 1.0 1.4 1.8 2.2 2.6
1
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0 200 400 600
0.01
0.1
1
10
100
1000
10 000
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
1 10 100 1000
10
1000
100
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P7

VS-HFA50PA60C-N3

Mfr. #:
Buy VS-HFA50PA60C-N3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2x25A 600V Ultrafast 23ns HEXFRED
Lifecycle:
New from this manufacturer.
Delivery:
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