IRF7413PBF

IRF7413PbF
www.irf.com 7
Fig 13. For N-Channel HEXFETS
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
* V
GS
= 5V for Logic Level Devices
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Peak Diode Recovery dv/dt Test Circuit
IRF7413PbF
www.irf.com 8
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF7413PbF
www.irf.com 9
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2008
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IRF7413PBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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