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IRF7413TRPBF

P1-P3P4-P6P7-P9
IRF7413PbF
V
DSS
= 30V
R
DS(on)
= 0.011Ω
HEXFET
®
Power MOSFET
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l 100% R
G
Tested
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
02/11/08
SO-8
S
y
mbol Parameter Units
V
DS
Drain-to-Source Volta
g
e
V
GS
Gate-to-Source Volta
g
e
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
P
u
l
se
d D
ra
i
n
C
urren
t
P
D
@T
A
= 25°C
Power Dissipation
W
Linear Derating Factor
mW/°C
E
AS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
g
enc
y
mJ
dv/dt Peak Diode Recovery dv/dt
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
°C
S
y
mbol Parameter T
y
pMaxUnits
R
θJL
Junction-to-Drain Lead ––– 20
R
θJA
Junction-to-Ambient
––– 50
V
2.5
Max
30
± 20
13
Thermal Resistance Ratings
Absolute Maximum Ratings
°C/W
9.2
5.0
0.02
260
-55 to +150
58
www.irf.com 1
PD - 95017C
IRF7413PbF
www.irf.com 2
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 7.3A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Starting T
J
= 25°C, L = 9.8mH
R
G
= 25Ω, I
AS
=7.3A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board
R
θ
is measured at T
J
approximately 90°C
Symbol Parameter Min Typ Max Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆
V
(BR)DSS
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C
––– ––– 0.011
––– ––– 0.018
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
g
fs
Forward Transconductance 10 ––– ––– S
––– ––– 12
––– ––– 25
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
Q
g
Total Gate Charge ––– 52 79
Q
gs
Gate-to-Source Charge ––– 6.1 9.2 nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 16 23
R
G
Gate Resistance ––– ––– 3.7
Ω
t
d(on)
Turn-On Delay Time ––– 8.6 –––
t
r
Rise Time ––– 50 –––
t
d(off)
Turn-Off Delay Time ––– 52 ––– ns
t
f
Fall Time ––– 46 –––
C
iss
Input Capacitance ––– 1800 –––
C
oss
Output Capacitance ––– 680 –––
C
rss
Reverse Transfer Capacitance ––– 240 –––
Symbol Parameter Min. Typ. Max. Units
Continuous Source Current
(Body Diode) A
Pulsed Source Current
(
Bod
y
Diode
)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 74 110 ns
Q
rr
Reverse Recovery Charge ––– 200 300 nC
I
SM
––– ––– 58
I
S
I
DSS
Drain-to-Source Leakage Current µA
I
GSS
pF
3.1––––––
nA
Ω
V
GS
= 4.5V, I
D
= 3.7A
Static Drain-to-Source On-Resistance
V
GS
= 10V, I
D
= 7.3A
R
DS(on)
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
V
DS
= 10V, I
D
= 3.7A
I
D
= 7.3A
V
DS
= 24V
Conditions
R
G
= 2.0
Ω,
See Fig. 10
V
GS
= 0V
R
G
= 6.2
Ω
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
T
J
= 25°C, I
S
= 7.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.3A
di/dt = 100A/µs
showing the
integral reverse
p-n junction diode.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 7.3A
V
GS
= -20V
V
GS
= 20V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
IRF7413PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 7.3A
D
P1-P3P4-P6P7-P9

IRF7413TRPBF

Mfr. #:
Buy IRF7413TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 30V 13A 11mOhm 44nC
Lifecycle:
New from this manufacturer.
Delivery:
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