2PA1576_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 2 of 7
NXP Semiconductors
2PA1576
PNP general-purpose transistor
4. Marking
[1] * = -: made in Hong Kong
* = t: made in Malaysia
5. Limiting values
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Table 3. Marking codes
Type number Marking code
[1]
2PA1576Q F*Q
2PA1576R F*R
2PA1576S F*S
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −60 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −6V
I
C
collector current (DC) - −150 mA
I
CM
peak collector current - −200 mA
I
BM
peak base current - −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-200mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
[1]
--625K/W
