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SI4830CDY-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
www.vishay.com
4
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4830CDY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0.0 0.5 1.0 1.5 2.0 2.5
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V thru 4 V
V
GS
=3V
0.014
0.016
0.018
0.020
0.022
0.024
0 6 12 18 24 30
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=10V
V
GS
=4.5V
0
2
4
6
8
10
0.0 3.6 7.2 10.8 14.4 18.0
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=20V
V
DS
=10V
I
D
= 8 A
V
DS
=15V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
6
12
18
24
30
012345
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
240
480
720
960
1200
0 5 10 15 20 25 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=10V
V
GS
=4.5V
I
D
= 8 A
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
5
Vishay Siliconix
Si4830CDY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
- 0.
8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
=5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
02468 10
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
= 8 A
0
12
24
36
48
60
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
- Drain Current (A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1ms
10 ms
100 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
1s
DC
10 s
BVDSS Limited
www.vishay.com
6
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4830CDY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating, Junction-to-Foot
0.0
0.7
1.4
2.1
2.8
3.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4830CDY-T1-GE3

Mfr. #:
Buy SI4830CDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Lifecycle:
New from this manufacturer.
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