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UGF8HCTHE3/45

P1-P3P4-P5
UG8xCT, UGF8xCT, UGB8xCT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
1
Document Number: 88766
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high voltage and high frequency power factor
corrector, freewheeling diodes and secondary DC/DC
rectification application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 4.0 A
V
RRM
500 V to 600 V
I
FSM
65 A
t
rr
25 ns
V
F
at I
F
= 4 A 1.50 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
UG8xCT Series
ITO-220AB
UGB8xCT Series
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
UGF8xCT Series
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG8HCT UG8JCT UNIT
Max. repetitive peak reverse voltage V
RRM
500 600 V
Max. working reverse voltage V
RWM
400 480 V
Max. RMS voltage V
RMS
350 420 V
Max. DC blocking voltage V
DC
500 600 V
Max. average forward rectified current I
F(AV)
8.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
65 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
UG8xCT, UGF8xCT, UGB8xCT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
2
Document Number: 88766
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL UG8HCT UG8JCT UNIT
Max. instantaneous forward voltage per diode
(1)
I
F
= 4 A T
J
= 25 °C
V
F
1.75
V
I
F
= 4 A T
J
= 125 °C 1.50
Max. DC reverse current per diode at V
RWM
T
J
= 25 °C
I
R
30 μA
T
J
= 100 °C 800 μA
T
J
= 125 C 4 mA
Max. reverse recovery time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
25 ns
Max. reverse recovery time per diode
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
t
rr
50 ns
Typical softness factor (t
b
/t
a
)
I
F
= 4.0 A, dI/dt = 240 A/μs,
V
R
= 400 V, I
rr
= 0.1 I
RM
S 0.9 -
Max. reverse recovery current per diode
I
F
= 4.0 A, dI/dt = 32 A/μs,
V
R
= 400 V, T
C
= 125 °C
I
RM
3.0 A
Max. reverse recovery current per diode
I
F
= 4.0 A, dI/dt = 240 A/μs,
V
R
= 400 V, T
C
= 125 °C
I
RM
8.0 A
Peak forward recovery time per diode
I
F
= 4.0 A, dI/dt = 64 A/μs,
V
F
= 1.1 V
F max.
t
fr
500 ns
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG8 UGF8 UGB8 UNIT
Typical thermal resistance from junction to case per diode R
JC
3.5 6.0 3.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB UG8JCT-E3/45 1.85 45 50/tube Tube
ITO-220AB UGF8JCT-E3/45 2.00 45 50/tube Tube
TO-263AB UGB8JCT-E3/45 1.35 45 50/tube Tube
TO-263AB UGB8JCT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB UG8JCTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB UGF8JCTHE3/45
(1)
2.00 45 50/tube Tube
TO-263AB UGB8JCTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB UGB8JCTHE3/81
(1)
1.35 81 800/reel Tape and reel
UG8xCT, UGF8xCT, UGB8xCT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
3
Document Number: 88766
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Reverse Switching Characteristics Per Diode
0
0
12
10
6
8
2
4
25 50 75 100 125 150
Average Forward Rectified Current (A)
Case Temperature (°C)
UG8JCT, UGB8JCT
UGF8JCT
P.C.B. with 7.5 x 7.5 x 0.3 cm
Copper Pad
1 10010
0
20
40
60
80
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.5 1.0 1.5 2.0 2.5
Instantaneous Forward Voltage (V)
0.01
0.1
10
100
1
Instantaneous Forward Current (A)
T
J
= 25 °C max.
Pulse Width = 300 µs
1 % Duty Cycle
6040200 10080
10
100
1000
10 000
1
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
101 100
100
10
1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0
120
140
100
60
80
20
40
25 50 75 100 125 150
Stored Charge/Reverse Recovery Time
(nC/ns)
Q
rr
T
rr
I
F
= 4 A
V
R
= 30 V
dI/dt =
240 A/µs
60 A/µs
50 A/µs
50 A/µs
60 A/µs
240 A/µs
Junction Temperature (°C)
P1-P3P4-P5

UGF8HCTHE3/45

Mfr. #:
Buy UGF8HCTHE3/45
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 500 Volt 8.0A 25ns Dual Common Cathode
Lifecycle:
New from this manufacturer.
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