4
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
R4
Figure 1. MRF7S21150HR3(HSR3) Test Circuit Schematic
Z24 0.096 x 0.138 Microstrip
Z25 0.335 x 0.066 Microstrip
Z26 0.069 x 0.080 Microstrip
Z27 0.466 x 0.040 Microstrip
Z28 R = 0.526 α = 60° Microstrip Butterfly
Z29, Z31 0.825 x 0.066 Microstrip
Z30, Z32 R = 0.526 α = 60° Microstrip Butterfly
PCB Taconic TLX8 -0300, 0.030, ε
r
= 2.55
* Variable for tuning
Z1 0.980 x 0.138 Microstrip
Z2 0.461 x 0.066 Microstrip
Z3 0.534 x 0.458 Microstrip
Z4* 0.138 x 0.126 Microstrip
Z5* 0.536 x 0.126 Microstrip
Z6 0.147 x 0.126 Microstrip
Z7 0.060 x 0.513 Microstrip
Z8 0.151 x 0.630 Microstrip
Z9 0.112 x 0.630 Microstrip
Z10 0.337 x 0.957 Microstrip
Z11 0.176 x 0.957 Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C6
R1
Z4 Z5 Z6 Z7
C1
Z8
R2
Z29
Z16Z9 Z20
C8 C11
+
C9
Z21 Z22 Z23
C12 C5
Z10
Z31
Z25
Z1 Z2 Z3
C4
R3
Z26
Z27
Z28
Z11 Z12 Z13 Z15
Z14
Z17 Z18 Z19
C3
C2
Z24
Z32
C10 C7
Z30
Z12 0.178 x 0.067 Microstrip
Z13 0.039 x 0.095 Microstrip
Z14 0.079 x 0.060 Microstrip
Z15* 0.168 x 0.095 Microstrip
Z16* 0.113 x 0.095 Microstrip
Z17* 0.128 x 0.095 Microstrip
Z18 0.079 x 0.215 Microstrip
Z19 0.020 x 0.095 Microstrip
Z20, Z21 0.070 x 0.215 Microstrip
Z22 0.392 x 0.067 Microstrip
Z23 0.370 x 0.089 Microstrip
Table 5. MRF7S21150HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC
C2, C3 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC
C4, C12 0.2 pF Chip Capacitors ATC100B0R2BT500XT ATC
C5 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC
C6, C7, C8 10 µF Chip Capacitors C5750X5R1H106M TDK
C9, C10 100 nF Chip Capacitors C1206C104K2RAC Kemet
C11 220 µF, 63 V Electrolytic Capacitor, Axial 222212018221 Vishay BC Components
R1, R2 10 k, 1/4 W Chip Resistors CRCW12061002FKEA Vishay
R3 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
R4 2.2 , 1/4 W Chip Resistor CRCW12062R20FKEA Vishay
MRF7S21150HR3 MRF7S21150HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF7S21150HR3(HSR3) Test Circuit Component Layout
CUT OUT AREA
MRF7S21150H/S
Rev. 7
C6
R1 R2
C9
C4
C1
R3
C8
C2
C3
C12 C5
C11
C10
C7
R4
V
GS
V
DD
6
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
22202060
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 44 Watts Avg.
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 1350 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
216021202100
18
16
−2.5
33
32
31
30
29
0
−0.5
−1
η
D
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
−24
−8
−12
−16
−20
η
D
, DRAIN
EFFICIENCY (%)
2140
2080 22002180
17.5
17
16.5
15.5
15
14.5
14
13.5
13
−1.5
−2
−4
G
ps
, POWER GAIN (dB)
22202060
IRL
G
ps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ P
out
= 75 Watts Avg.
V
DD
= 28 Vdc, P
out
= 75 W (Avg.), I
DQ
= 1350 mA
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
216021202100
18
16
−4.5
42
41
40
39
38
37
−2.5
−3
η
D
IRL, INPUT RETURN LOSS (dB)
PARC (dB)
−25
−5
−10
−15
−20
η
D
, DRAIN
EFFICIENCY (%)
2140
2080 22002180
17.5
17
16.5
15.5
15
14.5
14
13.5
−3.5
−4
Figure 5. Two-Tone Power Gain versus
Output Power
100
13
19
1
I
DQ
= 2020 mA
1690 mA
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
675 mA
1350 mA
18
17
16
10 300
G
ps
, POWER GAIN (dB)
15
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−10
I
DQ
= 675 mA
P
out
, OUTPUT POWER (WATTS) PEP
1350 mA
1690 mA
10
−20
−30
−40
100
−60
−50
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
300
13
14
1010 mA
1010 mA
2020 mA

MRF7S21150HSR3

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV7 2.1GHZ 150W NI780HS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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