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DMT6008LFG-13

P1-P3P4-P6
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMT6008LFG
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
C
= +25°C
60V
7.5m @ V
GS
= 10V
60A
11.5m @ V
GS
= 4.5V
49A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Synchronous Rectifier
• Backlighting
• Power Management Functions
• DC-DC Converters
Features and Benefits
• Low R
DS(ON)
– Ensures on State Losses Are Minimized
• Excellent Q
gd
x
R
DS (ON)
Product (FOM)
• Advanced Technology for DC/DC Converts
• Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
• 100% UIS (Avalanche) rated
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: POWERDI
®
3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMT6008LFG-7
POWERDI3333-8
2,000/Tape & Reel
DMT6008LFG-13
POWERDI3333-8
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Internal Schematic
S6E = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
Bottom View
S
S
S
G
D
D
D
D
Pin 1
D
S
G
Gate Protection
Diode
ESD PROTECTED
e3
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMT6008LFG
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
13
11
A
T
C
= +25°C
T
C
= +70°C
I
D
60
48
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
3 A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
80 A
Avalanche Current (Note 6)
I
AS
13 A
Avalanche Energy (Note 6)
E
AS
25 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
2.2
W
T
C
= +25°C
41
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
58
°C/W
t<10s 35
Thermal Resistance, Junction to Case (Note 5)
R
JC
3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current
I
DSS
— — 1 A
V
DS
= 48V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 A
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.7 — 2.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
— 5.0 7.5
m
V
GS
= 10V, I
D
= 20A
— 6.5 11.5
V
GS
= 4.5V, I
D
= 20A
— 19 —
V
GS
= 3V, I
D
= 3A
Diode Forward Voltage
V
SD
— 0.9 1.2 V
V
GS
= 0V, I
S
= 20A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
2713
—
pF
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
822
—
Reverse Transfer Capacitance
C
rss
—
57
—
Gate Resistance
R
g
—
0.54
—
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
22.4
—
nC
V
DS
= 30V, I
D
= 20A
Total Gate Charge (V
GS
= 10V) Q
g
—
50.4
—
Gate-Source Charge
Q
gs
—
9.6
—
Gate-Drain Charge
Q
gd
—
7.8
—
Turn-On Delay Time
t
D(on)
—
7.0
—
nS
V
DD
= 30V, V
GS
= 10V,
I
D
= 20A, R
G
= 3,
Turn-On Rise Time
t
r
—
4.4
—
Turn-Off Delay Time
t
D(off)
—
24.4
—
Turn-Off Fall Time
t
f
—
7.0
—
Notes: 5. R
JA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
JC
is guaranteed by design
while R
JA
is determined by the user’s board design.
6 .UIS in production with L = 0.3mH, T
J
= +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT6008LFG
Document number: DS36680 Rev. 2 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMT6008LFG
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0.00 0.50 1.00 1.50 2.00 2.50 3.00
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V= 2.5V
GS
V= 3.0V
GS
V= 3.5V
GS
V= 4.5V
GS
V= 10V
GS
V= 4.0V
GS
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0 5 10 15 20 25 30
1.0
0.1
0.01
0.001
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
V = 3.0V
GS
V= 4.5V
GS
V = 10V
GS
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
23456789101112
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESISTAN
C
E ( )
DS(ON)
Ω
I= 20A
D
I= 3.0A
D
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.4
0.8
1.2
1.6
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I= 5A
GS
D
V=V
I = 10A
GS
D
10
P1-P3P4-P6

DMT6008LFG-13

Mfr. #:
Buy DMT6008LFG-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
Lifecycle:
New from this manufacturer.
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