2SK1828
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1828
High Speed Switching Applications
Analog Switch Applications
• 2.5 V gate drive
• Low threshold voltage: V
th
= 0.5 to 1.5 V
• High speed
• Enhancement-mode
• Small package
Marking Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DS
20 V
Gate-source voltage V
GSS
10 V
DC drain current I
D
50 mA
Drain power dissipation P
D
200 mW
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1F
Weight: 0.012 g (typ.)
Start of commercial production
1991-02
