2004 Feb 26 3
NXP Semiconductors Product data sheet
20 V, 2 A very low V
F
MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
PMEG2020AEA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F
(AV) rating will be available on request.
3. Device mounted on a on an FR4 printed-circuit board with copper clad 10 x 10 mm.
4. Soldering point of cathode tab.
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 20 V
I
F
continuous forward current T
sp
≤ 55 °C − 2 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.25 − 7 A
I
FSM
non-repetitive peak forward current t = 8 ms square wave − 9 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient notes 1 and 2 450 K/W
R
th(j-a)
thermal resistance from junction to ambient notes 2 and 3 210 K/W
R
th(j-s)
thermal resistance from junction to solder point note 4 90 K/W
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage see Fig.2; note 1
I
F
= 0.01 A 200 220 mV
I
F
= 0.1 A 265 290 mV
I
F
= 1 A 380 430 mV
I
F
= 2 A 450 525 mV
I
R
reverse current V
R
= 5 V; see Fig.3 15 50 μA
V
R
= 10 V 20 80 μA
V
R
= 20 V 50 200 μA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz; see Fig.4 55 70 pF
