SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995 ✪
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE BCP53
PARTMARKING DETAILS BCP56
BCP56 10
BCP56 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
100 V
Collector-Emitter Voltage V
CEO
80 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1.5 A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
2W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80 V I
C
= 10mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
100
20
nA
µA
V
CB
=30V
V
CB
=30V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
10
µA
V
EB
=5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5 V I
C
=500mA, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0 V I
C
=500mA, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
BCP56-10
BCP56-16
40
25
63
100
100
160
250
160
250
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
Transition Frequency f
T
125 MHz I
C
=50mA, V
CE
=10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
BCP56
C
C
E
B
3 - 18
