SSM3K16FU
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU
High Speed Switching Applications
Analog Switching Applications
• Suitable for high-density mounting due to compact package
• Low on resistance: R
on
= 3.0 Ω (max) (@V
GS
= 4 V)
: R
on
= 4.0 Ω (max) (@V
GS
= 2.5 V)
: R
on
= 15 Ω (max) (@V
GS
= 1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage V
DS
20 V
Gate-Source voltage V
GSS
±10 V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta = 25°C) P
D
(Note 1) 150 mW
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm
2
× 3)
Marking Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1E
0.6 mm
1.0 mm
D S
1 2
3
12
3
Start of commercial production
2001-03