CAV93C76YE-GT3

CAV93C76
http://onsemi.com
4
Device Operation
The CAV93C76 is a 8192bit nonvolatile memory
intended for use with industry standard microprocessors.
The CAV93C76 can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 13bit
instructions control the read, write and erase operations of
the device. When organized as X8, seven 14bit instructions
control the read, write and erase operations of the device.
The CAV93C76 operates on a single power supply and will
generate on chip, the high voltage required during any write
operation.
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
after a write operation.
The ready/busy status can be determined after the start of
a write operation by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the falling edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin.
The format for all instructions sent to the device is a
logical “1” start bit, a 2bit (or 4bit) opcode, 10bit address
(an additional bit when organized X8) and for write
operations a 16bit data field (8bit for X8 organizations).
The most significant bit of the address is “don’t care” but it
must be present.
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAV93C76 will
come out of the high impedance state and, after sending an
initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (t
PD0
or t
PD1
).
For the CAV93C76, after the initial data word has been
shifted out and CS remains asserted with the SK clock
continuing to toggle, the device will automatically
increment to the next address and shift out the next data word
in a sequential READ mode. As long as CS is continuously
asserted and SK continues to toggle, the device will keep
incrementing to the next address automatically until it
reaches the end of the address space, then loops back to
address 0. In the sequential READ mode, only the initial data
word is preceeded by a dummy zero bit. All subsequent data
words will follow without a dummy zero bit.
Write
After receiving a WRITE command, address and the data,
the CS (Chip Select) pin must be deselected for a minimum
of t
CSMIN
. The falling edge of CS will start the self clocking
clear and data store cycle of the memory location specified
in the instruction. The clocking of the SK pin is not
necessary after the device has entered the self clocking
mode. The ready/busy status of the CAV93C76 can be
determined by selecting the device and polling the DO pin.
Since this device features AutoClear before write, it is
NOT necessary to erase a memory location before it is
written into.
SK
DI
CS
DO
VALID
VALID
DATA VALID
Figure 2. Synchronous Data Timing
t
CSS
t
SKHI
t
SKLOW
t
DIS
t
DIS
t
DIH
t
CSH
t
CSMN
t
PD0
, t
PD1
CAV93C76
http://onsemi.com
5
SK
CS
DI
DO
HIGHZ
11 0
Dummy 0
Address + 1 Address + 2 Address + n
Don’t Care
Figure 3. READ Instruction Timing
A
N
A
N1
A
0
D
15
. . .
or
D
7
. . .
D
15
. . . D
0
or
D
7
. . . D
0
D
15
. . . D
0
or
D
7
. . . D
0
D
15
. . . D
0
or
D
7
. . . D
0
SK
CS
DI
DO
STANDBY
HIGHZ
HIGHZ
101
BUSY
READY
STATUS
VERIFY
Figure 4. WRITE Instruction Timing
A
N
A
N1
A
0
D
N
D
0
t
CSMIN
t
HZ
t
SV
t
EW
CAV93C76
http://onsemi.com
6
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
t
CSMIN
. The falling edge of CS will start the self clocking
clear cycle of the selected memory location. The clocking of
the SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the CAV93C76
can be determined by selecting the device and polling the
DO pin. Once cleared, the content of a cleared location
returns to a logical “1” state.
Erase/Write Enable and Disable
The CAV93C76 powers up in the write disable state. Any
writing after powerup or after an EWDS (write disable)
instruction must first be preceded by the EWEN (write
enable) instruction. Once the write instruction is enabled, it
will remain enabled until power to the device is removed, or
the EWDS instruction is sent. The EWDS instruction can be
used to disable all CAV93C76 write and clear instructions,
and will prevent any accidental writing or clearing of the
device. Data can be read normally from the device
regardless of the write enable/disable status.
Erase All
Upon receiving an ERAL command, the CS (Chip Select)
pin must be deselected for a minimum of t
CSMIN
. The falling
edge of CS will start the self clocking clear cycle of all
memory locations in the device. The clocking of the SK pin
is not necessary after the device has entered the self clocking
mode. The ready/busy status of the CAV93C76 can be
determined by selecting the device and polling the DO pin.
Once cleared, the contents of all memory bits return to a
logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
t
CSMIN
. The falling edge of CS will start the self clocking
data write to all memory locations in the device. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAV93C76 can be determined by selecting the device and
polling the DO pin. It is not necessary for all memory
locations to be cleared before the WRAL command is
executed.
Note 1: After the last data bit has been sampled, Chip Select
(CS) must be brought Low before the next rising edge of the
clock (SK) in order to start the selftimed high voltage cycle.
This is important because if CS is brought low before or after
this specific frame window, the addressed location will not
be programmed or erased.
PowerOn Reset (POR)
The CAV93C76 incorporates PowerOn Reset (POR)
circuitry which protects the device against malfunctioning
while V
CC
is lower than the recommended operating
voltage.
The device will power up into a readonly state and will
powerdown into a reset state when V
CC
crosses the POR
level of ~1.3 V.
SK
CS
DI
DO
STANDBY
HIGHZ
HIGHZ
1
BUSY
READY
STATUS VERIFY
11
Figure 5. ERASE Instruction Timing
A
N
A
N1
A
0
t
CS
t
SV
t
HZ
t
EW

CAV93C76YE-GT3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
EEPROM 8KB MICROWIRE SER EEPROM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet