RJK1053DPB Preliminary
R07DS0084EJ0200 Rev.2.00 Page 4 of 6
Apr 11, 2013
Case Temperature Tc (
°
C)
Static Drain to Source on State Resistance
vs. Temperature
40
32
24
16
8
–25 0 25 50 75 100 125 150
0
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Avalanche Energy E
AS
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
4
25 50 75 100 125 150
0
50
40
30
20
10
0
0.4 0.8 1.2 1.6 2.0
Pulse Test
5 V
V
GS
= 0 V
10 V
I
AP
= 12.5 A
V
DD
= 50 V
duty < 0.1 %
Rg ≥ 50 Ω
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
010 50403020
10000
1000
100
10
V
GS
= 0 V
f = 1 MHz
Crss
Coss
Ciss
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
120
160
200
80
40
0
20
16
12
8
4
20 40 60 80 100
00
I
D
= 25 A
V
DD
= 50 V
25 V
10 V
V
DD
= 50 V
25 V
10 V
V
GS
V
DS
10 V
V
GS
= 4.5 V
Pulse Test
I
D
= 12.5 A
