All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 9 Rev. 02, 2014-02-26
PXAC261202FC
PXAC261202FC
Package H-37248-4
Thermally-Enhanced High Power RF LDMOS FET
120 W, 28 V, 2496 – 2690 MHz
Description
The PXAC261202FC is a 120-watt LDMOS FET with an asymetric
design for use in multi-standard cellular power amplifi er applications
in the 2496 to 2690 MHz frequency band. It features dual-path design,
input and output matching, and a thermally-enhanced package with
earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Features
• Broadband internal matching
• CW performance in a Doherty confi guration, 2555
MHz, 28 V
- Output power at P
1dB
= 80 W
- Gain = 13.6 dB
- Effi ciency = 48%
• Single-carrier WCDMA performance in a Doherty
confi guration, 2555 MHz, 28 V, 8 dB PAR
- Output power 28 W
- Gain = 14.3 dB
- Effi ciency = 44.5%
- ACPR –30 dBc @ 5 MHz
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifi cations (tested in Infi neon Doherty test fi xture)
V
DD
= 28 V, V
GS(peak)
= 0.9 V, I
DQ
= 230 mA, P
OUT
= 28 W average, ƒ
1
= 2610 MHz, ƒ
2
= 2620 MHz. 3GPP WCDMA signal:
3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF.
Characteristic Symbol Min Typ Max Unit
Linear Gain G
ps
12.5 13.5 — dB
Drain Efficiency
η
D
41.0 45 — %
Intermodulation Distortion IMD — –29.5 –26.0 dBc
5
10
15
20
25
30
35
40
45
50
7
8
9
10
11
12
13
14
15
16
29 33 37 41 45 49
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 220 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
GainGainGainGain
Efficienc
2555 MHz
2585 MHz
2615 MHz
c261202fc-gr13
