2N6027RL1

Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 2
1 Publication Order Number:
2N6027/D
Preferred Device
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to “program’’ unijunction
characteristics such as R
BB
, η, I
V
, and I
P
by merely selecting two
resistor values. Application includes thyristor–trigger, oscillator, pulse
and timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
inexpensive TO–92 plastic package for high–volume requirements,
this package is readily adaptable for use in automatic insertion
equipment.
Programmable — R
BB
, η, I
V
and I
P
Low On–State Voltage — 1.5 Volts Maximum @ I
F
= 50 mA
Low Gate to Anode Leakage Current — 10 nA Maximum
High Peak Output Voltage — 11 Volts Typical
Low Offset Voltage — 0.35 Volt Typical (R
G
= 10 k ohms)
Device Marking: Logo, Device Type, e.g., 2N6027, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
*Power Dissipation
Derate Above 25°C
P
F
1/θ
JA
300
4.0
mW
mW/°C
*DC Forward Anode Current
Derate Above 25°C
I
T
150
2.67
mA
mA/°C
*DC Gate Current I
G
50 mA
Repetitive Peak Forward Current
100
µs Pulse Width, 1% Duty Cycle
*20
µs Pulse Width, 1% Duty Cycle
I
TRM
1.0
2.0
Amps
Non–Repetitive Peak Forward Current
10
µs Pulse Width
I
TSM
5.0 Amps
*Gate to Cathode Forward Voltage V
GKF
40 Volts
*Gate to Cathode Reverse Voltage V
GKR
5.0 Volts
*Gate to Anode Reverse Voltage V
GAR
40 Volts
*Anode to Cathode Voltage
(1)
V
AK
40 Volts
Operating Junction Temperature Range T
J
–50 to
+100
°C
*Storage Temperature Range T
stg
–55 to
+150
°C
*Indicates JEDEC Registered Data
(1) Anode positive, R
GA
= 1000 ohms
Anode negative, R
GA
= open
PUTs
40 VOLTS
300 mW
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
K
G
A
TO–92 (TO–226AA)
CASE 029
STYLE 16
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Cathode
Anode
2N6027, 2N6028
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
75 °C/W
Thermal Resistance, Junction to Ambient R
θJA
200 °C/W
Maximum Lead Temperature for Soldering Purposes
( 1/16 from case, 10 secs max)
T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Fig. No. Symbol Min Typ Max Unit
*Peak Current
(V
S
= 10 Vdc, R
G
= 1 MΩ) 2N6027
2N6028
(V
S
= 10 Vdc, R
G
= 10 k ohms) 2N6027
2N6028
2,9,11 I
P
1.25
0.08
4.0
0.70
2.0
0.15
5.0
1.0
µA
*Offset Voltage
(V
S
= 10 Vdc, R
G
= 1 MΩ) 2N6027
2N6028
(V
S
= 10 Vdc, R
G
= 10 k ohms) (Both Types)
1 V
T
0.2
0.2
0.2
0.70
0.50
0.35
1.6
0.6
0.6
Volts
*Valley Current
(V
S
= 10 Vdc, R
G
= 1 MΩ) 2N6027
2N6028
(V
S
= 10 Vdc, R
G
= 10 k ohms) 2N6027
2N6028
(V
S
= 10 Vdc, R
G
= 200 ohms) 2N6027
2N6028
1,4,5 I
V
70
25
1.5
1.0
18
18
150
150
50
25
µA
mA
*Gate to Anode Leakage Current
(V
S
= 40 Vdc, T
A
= 25°C, Cathode Open)
(V
S
= 40 Vdc, T
A
= 75°C, Cathode Open)
I
GAO
1.0
3.0
10
nAdc
Gate to Cathode Leakage Current
(V
S
= 40 Vdc, Anode to Cathode Shorted)
I
GKS
5.0 50 nAdc
*Forward Voltage (I
F
= 50 mA Peak)
(1)
1,6 V
F
0.8 1.5 Volts
*Peak Output Voltage
(V
G
= 20 Vdc, C
C
= 0.2 µF)
3,7 V
o
6.0 11 Volt
Pulse Voltage Rise Time
(V
B
= 20 Vdc, C
C
= 0.2 µF)
3 t
r
40 80 ns
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width 300 µsec, Duty Cycle 2%.
2N6027, 2N6028
http://onsemi.com
3
K
G
A
Programmable Unijunction
with “Program” Resistors
R1 and R2
1A –
V
AK
+V
B
I
A
R1
R1 + R2
R1
R2
– V
S
=
V
B
V
AK
I
A
+
V
S
R
G
R
G
=
R1 R2
R1 + R2
Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
1B –
Adjust
for
Turn–on
Threshold
100k
1.0%
2N5270
V
B
0.01 µF
20
R
R
R
G
= R/2
V
S
= V
B/2
(See Figure 1)
+
I
P
(SENSE)
100 µV = 1.0 nA
Scope
Put
Under
Test
C
C
510k
16k
27k
20
v
o
+V
B
+V
V
o
6 V
0.6 V
t
f
t
IC – Electrical Characteristics
V
A
V
S
V
F
V
V
–V
P
I
A
I
F
I
V
I
P
V
T
= V
P
– V
S
I
GAO
Figure 1. Electrical Characterization
Figure 2. Peak Current (I
P
) Test Circuit Figure 3. V
o
and t
r
Test Circuit

2N6027RL1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
SCRs 40V 300mW PUT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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