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HFA3102BZ96

P1-P3P4-P6P7-P8
1
®
FN3635.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HFA3102
Dual Long-Tailed Pair Transistor Array
The HFA3102 is an all NPN transistor array configured as
dual differential amplifiers with tail transistors. Based on
Intersil bonded wafer UHF-1 SOI process, this array
achieves very high f
T
(10GHz) while maintaining excellent
h
FE
and V
BE
matching characteristics over temperature.
Collector leakage currents are maintained to under 0.01nA.
Pinout/Functional Diagram
HFA3102 (SOIC)
TOP VIEW
Features
• High Gain-Bandwidth Product (f
T
) . . . . . . . . . . . . . 10GHz
• High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz
• High Current Gain (h
FE
) . . . . . . . . . . . . . . . . . . . . . . . 70
• Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB
• Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA
• Excellent h
FE
and V
BE
Matching
• Pin-to-Pin to UPA102G
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Single Balanced Mixers
• Wide Band Amplification Stages
• Differential Amplifiers
• Multipliers
• Automatic Gain Control Circuits
• Frequency Doublers, Tripplers
• Oscillators
• Constant Current Sources
• Wireless Communication Systems
• Radio and Satellite Communications
• Fiber Optic Signal Processing
• High Performance Instrumentation
Ordering Information
PART NUMBER
TEMP.
RANGE (°C) PACKAGE
PKG.
DWG. #
HFA3102B96 -40 to 85 14 Ld SOIC Tape
and Reel
M14.15
HFA3102BZ
(Note)
-40 to 85 14 Ld SOIC
(Pb-free)
M14.15
HFA3102BZ96
(Note)
-40 to 85 14 Ld SOIC Tape
and Reel (Pb-free)
M14.15
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
1234567
14 13 12 11 10 9 8
Q
1
Q
2
Q
3
Q
4
Q
5
Q
6
Data Sheet July 14, 2005
2
FN3635.5
July 14, 2005
Absolute Maximum Ratings T
A
= 25°C Thermal Information
V
CEO
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V
V
CBO
Collector to Base Voltage. . . . . . . . . . . . . . . . . . . . . . . 12.0V
V
EBO
Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V
I
C
, Collector Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C
Thermal Resistance (Typical, Note 1)
θ
JA
(°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Maximum Power Dissipation at 75°
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications T
A
= 25°C
SYMBOLS PARAMETER TEST CONDITIONS
(NOTE 2)
TEST
LEVEL
ALL GRADES
UNITSMIN TYP MAX
V
(BR)CBO
Collector-to-Base Breakdown Voltage (Q
1
,
Q
2
, Q
4
, and Q
5
)
I
C
= 100µA, I
E
= 0 A 12 18 - V
V
(BR)CEO
Collector-to-Emitter Breakdown
Voltage (Q
1
thru Q
6
)
I
C
= 100µA, I
B
= 0 A 8 12 - V
V
(BR)EBO
Emitter-to-Base Breakdown Voltage (Q
3
and Q
6
)
I
E
= 50µA, I
C
= 0 A 5.5 6 - V
I
CBO
Collector Cutoff Current
(Q
1
, Q
2
, Q
4
, and Q
5
)
V
CB
= 5V, I
E
= 0 A - 0.1 10 νΑ
I
EBO
Emitter Cutoff Current (Q
3
and Q
6
)V
EB
= 1V, I
C
= 0 A - - 100 νΑ
h
FE
DC Current Gain (Q
1
thru Q
6
)I
C
= 10mA, V
CE
= 3V A 40 70 - -
C
CB
Collector-to-Base Capacitance V
CB
= 5V, f = 1MHz B - 300 - fF
C
EB
Emitter-to-Base Capacitance V
EB
= 0, f = 1MHz B - 200 - fF
f
T
Current Gain-Bandwidth Product I
C
= 10mA, V
CE
= 5V C - 10 - GHz
f
MAX
Power Gain-Bandwidth Product I
C
= 10mA, V
CE
= 5V C - 5 - GHz
G
NFMIN
Available Gain at Minimum Noise Figure I
C
= 3mA,
V
CE
= 3V
f = 0.5GHz C - 17.5 - dB
f = 1.0GHz C - 12.4 - dB
NF
MIN
Minimum Noise Figure I
C
= 3mA,
V
CE
= 3V
f = 0.5GHz C - 1.8 - dB
f = 1.0GHz C - 2.1 - dB
NF
50Ω
50Ω Noise Figure I
C
= 3mA,
V
CE
= 3V
f = 0.5GHz C - 3.3 - dB
f = 1.0GHz C - 3.5 - dB
h
FE1
/h
FE2
DC Current Gain Matching
(Q
1
and Q
2
, Q
4
and Q
5
)
I
C
= 10mA, V
CE
= 3V A 0.9 1.0 1.1 -
V
OS
Input Offset Voltage (Q
1
and Q
2
),
(Q
4
and Q
5
)
I
C
= 10mA, V
CE
= 3V A - 1.5 5 mV
I
OS
Input Offset Current (Q
1
and Q
2
),
(Q
4
and Q
5
)
I
C
= 10mA, V
CE
= 3V A - 5 25 µA
dV
OS
/dT Input Offset Voltage TC
(Q
1
and Q
2
, Q
4
and Q
5
)
I
C
= 10mA, V
CE
= 3V C - 0.5 - µV/°C
I
TRENCH-
LEAKAGE
Collector-to-Collector Leakage
(Pin 6, 7, 13, and 14)
∆V
TEST
= 5V B - 0.01 - nA
NOTE:
2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only
HFA3102
3
FN3635.5
July 14, 2005
PSPICE Model for a Single Transistor
.Model NUHFARRY NPN
+ ( IS= 1.840E-16 XTI= 3.000E+00 EG= 1.110E+00
VAF= 7.200E+01
+ VAR= 4.500E+00 BF= 1.036E+02 ISE= 1.686E-19
NE= 1.400E+00
+ IKF= 5.400E-02 XTB= 0.000E+00 BR= 1.000E+01
ISC= 1.605E-14
+ NC= 1.800E+00 IKR= 5.400E-02 RC= 1.140E+01
CJC= 3.980E-13
+ MJC= 2.400E-01 VJC= 9.700E-01 FC= 5.000E-01
CJE= 2.400E-13
+ MJE= 5.100E-01 VJE= 8.690E-01 TR= 4.000E-09
TF= 10.51E-12
+ ITF= 3.500E-02 XTF= 2.300E+00 VTF= 3.500E+00
PTF= 0.000E+00
+ XCJC= 9.000E-01 CJS= 1.689E-13 VJS= 9.982E-01
MJS= 0.000E+00
+ RE= 1.848E+00 RB= 5.007E+01 RBM= 1.974E+00
KF= 0.000E+00
+ AF= 1.000E+00)
HFA3102
P1-P3P4-P6P7-P8

HFA3102BZ96

Mfr. #:
Buy HFA3102BZ96
Manufacturer:
Renesas / Intersil
Description:
RF Bipolar Transistors W/ANNEAL OPAMP 2X LONGTAIL NPN PAIR 15
Lifecycle:
New from this manufacturer.
Delivery:
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