This is information on a product in full production.
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N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STP130N6F7 60 V 5.0 mΩ 80 A 160 W
• Among the lowest R
DS(on)
on the market
• Excellent figure of merit (FoM)
• Low C
rss
/C
iss
ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code Marking Package Packing
STP130N6F7 130N6F7 TO-220 Tube
AM01475v1_Tab
D(2,
T
AB)
G(1)
S(3)