IRF7754PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 39 59 ns T
J
= 25°C, I
F
= -1.0A
Q
rr
Reverse Recovery Charge ––– 27 41 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
-22
-1.0
A
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
S
D
G
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -12 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.008 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 25 V
GS
= -4.5V, I
D
= -5.4A
––– 34 V
GS
= -2.5V, I
D
= -4.6A
––– 49 V
GS
= -1.8V, I
D
= -3.9A
V
GS(th)
Gate Threshold Voltage -0.4 ––– -0.9 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 16 ––– ––– S V
DS
= -10V, I
D
= -5.4A
––– ––– -1.0 V
DS
= -9.6V, V
GS
= 0V
––– ––– -25 V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -8V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 8V
Q
g
Total Gate Charge ––– 22 ––– I
D
= -5.4A
Q
gs
Gate-to-Source Charge ––– 3.9 ––– nC V
DS
= -6V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 4.8 ––– V
GS
= -4.5V
t
d(on)
Turn-On Delay Time ––– 9.8 14.7 V
DD
= -6V, V
GS
= -4.5V
t
r
Rise Time ––– 18 27 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 267 401 R
D
= 6Ω
t
f
Fall Time ––– 191 287 R
G
= 6Ω
C
iss
Input Capacitance ––– 1984 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 618 ––– pF V
DS
= -6V
C
rss
Reverse Transfer Capacitance ––– 385 ––– ƒ = 1.0MHz
I
GSS
µA
mΩ
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
