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2PD601ART,215

P1-P3P4-P6P7-P9P10-P11
2PD601ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 15 March 2007 3 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
FR4 PCB, standard footprint
Fig 1. Power derating curve
T
amb
(°C)
−75 17512525 75−25
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100
200
300
P
tot
(mW)
0
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 140 K/W
2PD601ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 15 March 2007 4 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
006aaa991
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.75
0.50
0.33
0.20
0.01
0.10
0.05
0.02
0
δ = 1
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=60V; I
E
=0A--10nA
V
CB
=60V;I
E
=0A;
T
j
= 150 °C
--5µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A --10nA
h
FE
DC current gain V
CE
=2V;
I
C
= 100 mA
90 - -
V
CE
=10V;
I
C
=2mA
210 - 340
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA;
I
B
=10mA
[1]
- - 250 mV
f
T
transition frequency V
CE
=10V;
I
C
= 2 mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A;
f=1MHz
--3pF
2PD601ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 15 March 2007 5 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
V
CE
=10V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
I
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 150 °C
I
C
/I
B
=10
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
(mA)
10
−1
10
2
101
006aaa992
200
300
100
400
500
h
FE
0
(1)
(2)
(3)
V
CE
(V)
0108462
006aaa993
0.04
0.06
0.02
0.08
0.1
I
C
(A)
0
I
B
(mA) = 0.56
0.50
0.44
0.38
0.32
0.26
0.20
0.14
0.08
0.02
006aaa994
0.5
0.9
1.3
V
BEsat
(V)
0.1
I
C
(mA)
10
−1
10
2
101
(1)
(2)
(3)
006aaa995
I
C
(mA)
10
−1
10
2
101
10
−1
1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P11

2PD601ART,215

Mfr. #:
Buy 2PD601ART,215
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN TRANSISTOR
Lifecycle:
New from this manufacturer.
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