IXTA6N50D2 Datasheet IXTA6N50D2, IXTH6N50D2, IXTP6N50D2 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSX

T

J

= 25°C to 150°C 500 V

V

GSX

Continuous ±20 V

V

GSM

Transient ±30 V

P

D

T

C

= 25°C 300 W

T

J

- 55 ... +150 °C

T

JM

150 °C

T

stg

- 55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100177B(03/11)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSX

V

GS

= - 5V, I

D

= 250μA 500 V

V

GS(off)

V

DS

= 25V, I

D

= 250μA - 2.5 - 4.5 V

I

GSX

V

GS

= ±20V, V

DS

= 0V ±100 nA

I

DSX(off)

V

DS

= V

DSX

, V

GS

= - 5V 5 μA

T

J

= 125°C 50 μA

R

DS(on)

V

GS

= 0V, I

D

= 3A, Note 1 500 mΩ

I

D(on)

V

GS

= 0V, V

DS

= 25V, Note 1 6 A

Depletion Mode

MOSFET

N-Channel

IXTA6N50D2

IXTP6N50D2

IXTH6N50D2

V

DSX

= 500V

I

D(on)

> 6A

R

DS(on)

≤≤

≤ 500m

ΩΩ

Ω

Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies Meet UL 94 V-0

Flammability Classification

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• Audio Amplifiers

• Start-up Circuits

• Protection Circuits

• Ramp Generators

• Current Regulators

• Active Loads

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

D (Tab)

G

D

S

TO-263 AA (IXTA)

G

D

S

TO-220AB (IXTP)

D (Tab)

G

S

D (Tab)

IXTA6N50D2 IXTP6N50D2

IXTH6N50D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 30V, I

D

= 3A, Note 1 2.8 4.5 S

C

iss

2800 pF

C

oss

V

GS

= -10V, V

DS

= 25V, f = 1MHz 255 pF

C

rss

64 pF

t

d(on)

28 ns

t

r

72 ns

t

d(off)

82 ns

t

f

43 ns

Q

g(on)

96 nC

Q

gs

V

GS

= 5V, V

DS

= 250V, I

D

= 3A 11 nC

Q

gd

48 nC

R

thJC

0.41 °C/W

R

thCS

TO-220 0.50 °C/W

TO-247 0.21 °C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol Test Conditions Min. Typ. Max.

SOA V

DS

= 400V, I

D

= 0.45A, T

C

= 75°C, Tp = 5s 180 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

V

SD

I

F

= 6A, V

GS

= -10V, Note 1 0.8 1.3 V

t

rr

350 ns

I

RM

16 A

Q

RM

2.8 μC

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

V

GS

= ±5V, V

DS

= 250V, I

D

= 3A

R

G

= 2.4Ω (External)

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 Outline

I

F

= 3A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= -10V

TO-263 Outline

1. Gate

2. Drain

3. Source

4. Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

TO-247 Outline

1 = Gate

2 = Drain

3 = Source

IXTA6N50D2 IXTP6N50D2

IXTH6N50D2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

1

2

3

4

5

6

0.0 0.5 1.0 1.5 2.0 2.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 5V

3V

2V

1V

-2V

0V

-1V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 5V

4V

3V

2V

-2V

-1V

0V

1V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

1

2

3

4

5

6

012345

V

DS

- Volts

I

D

- Amperes

V

GS

= 5V

2V

1V

-1V

-2V

0V

Fig. 4. Drain Current @ T

J

= 25ºC

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

0 100 200 300 400 500 600

V

DS

- Volts

I

D

- Amperes

V

GS

= - 2.25V

- 2.50V

- 2.75V

- 3.00V

- 3.75V

- 3.25V

- 3.50V

Fig. 5. Drain Current @ T

J

= 100ºC

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

0 100 200 300 400 500 600

V

DS

- Volts

I

D

- Amperes

V

GS

= -2.50V

-2.75V

-3.00V

-3.25V

-3.50V

-3.75V

-4.00V

Fig. 6. Dynamic Output Resistance vs. Gate Voltage

1.E+03

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

-4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 -2.2 -2.0

V

GS

- Volts

R

O

- Ohms

∆

V

DS

= 350V - 100V

T

J

= 25ºC

T

J

= 100ºC

IXTA6N50D2

IXTA6N50D2

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