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PSMN005-30K,518

P1-P3P4-P6P7-P9P10-P12P13-P14
PSMN005-30K All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 22 December 2011 3 of 13
NXP Semiconductors
PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
Fig 1. Normalized continuous drain current as a
function of solder point temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
T
sp
(°C)
0 20015050 100
03aa25
40
80
120
I
der
(%)
0
T
sp
(°C)
0 20015050 100
03aa17
40
80
120
P
der
(%)
0
PSMN005-30K All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 22 December 2011 4 of 13
NXP Semiconductors
PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance from
junction to solder point
mounted on a metal clad board ;
see Figure 4
--20K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
03ah04
10
−1
1
10
10
2
10
−4
10
−3
10
−2
10
−1
1 10
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
t
p
t
p
T
P
t
T
δ =
Z
th(j-sp)
(K/W)
t
p
(s)
PSMN005-30K All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 22 December 2011 5 of 13
NXP Semiconductors
PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 30--V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
= 150 °C;
see Figure 8
0.5--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 8
--3.4V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 8
1- 3V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=30V; V
GS
=0V; T
j
=150°C --0.5mA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=13A; T
j
=25°C;
see Figure 9
; see Figure 10
-6.68mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 9; see Figure 10
-4.45.5mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=20A; V
DS
=15V; V
GS
=4.5V;
T
j
=25°C; see Figure 11
-34-nC
Q
GS
gate-source charge - 15 - nC
Q
GD
gate-drain charge - 14 - nC
C
iss
input capacitance V
DS
=25V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 12
- 3100 - pF
C
oss
output capacitance - 605 - pF
C
rss
reverse transfer
capacitance
- 405 - pF
t
d(on)
turn-on delay time V
DS
=15V; R
L
=15Ω; V
GS
=10V;
R
G(ext)
=6Ω; T
j
=25°C
-18-ns
t
r
rise time - 16 - ns
t
d(off)
turn-off delay time - 65 - ns
t
f
fall time - 45 - ns
g
fs
transfer conductance V
DS
=15V; I
D
=20A; T
j
=25°C - 60 - S
Source-drain diode
V
SD
source-drain voltage I
S
=15A; V
GS
=0V; T
j
=25°C;
see Figure 13
- 0.81 1.3 V
t
rr
reverse recovery time I
S
=10A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V; T
j
=25°C
-35-ns
Q
r
recovered charge - 20 - nC
P1-P3P4-P6P7-P9P10-P12P13-P14

PSMN005-30K,518

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Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
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