CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4 04/10 Rev. 0
Electrical and Mechanical Characteristics, T
j
= 25°C unless otherwise specied
Brake Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1 mA
Gate Leakage Current I
GES
±V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 5mA, V
CE
= 10V 5.4 6 6.6 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25°C — 1.7 2.15 Volts
(Chip) I
C
= 50A, V
GE
= 15V, T
j
= 125°C — 1.9 — Volts
I
C
= 50A, V
GE
= 15V, T
j
= 150°C — 1.95 — Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25°C
*6
— 1.8 2.25 Volts
(Terminal) I
C
= 50A, V
GE
= 15V, T
j
= 125°C
*6
— 2.0 — Volts
I
C
= 50A, V
GE
= 15V, T
j
= 150°C
*6
— 2.05 — Volts
Input Capacitance C
ies
— — 5.0 nF
Output Capacitance C
oes
V
GE
= 0V, V
CE
= 10V — — 1.0 nF
Reverse Transfer Capacitance C
res
— — 0.08 nF
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 50A, V
GE
= 15V — 117 — nC
Repetitive Peak Reverse Current I
RRM
*3
V
R
= V
RRM
— — 1 mA
Forward Voltage Drop V
EC
*3
I
E
= 50A, V
GE
= 0V, T
j
= 25°C — 1.7 2.15 Volts
(Chip) I
E
= 50A, V
GE
= 0V, T
j
= 125°C — 1.7 — Volts
I
E
= 50A, V
GE
= 0V, T
j
= 150°C — 1.7 — Volts
Forward Voltage Drop V
EC
*3
I
E
= 50A, V
GE
= 0V, T
j
= 25°C
*6
— 1.8 2.25 Volts
(Terminal) I
E
= 50A, V
GE
= 0V, T
j
= 125°C
*6
— 1.8 — Volts
I
E
= 50A, V
GE
= 0V, T
j
= 150°C
*6
— 1.8 — Volts
Thermal and Mechanical Characteristics, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case
*1
R
th(j-c)
Q Per IGBT — — 0.35 K/W
Thermal Resistance, Junction to Case
*1
R
th(j-c)
D Per Clamp Diode — — 0.63 K/W
Internal Gate Resistance R
g
Per Switch — 0 — Ω
NTC Thermistor Sector, T
j
= 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R T
C
= 25°C 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R T
C
= 100°C, R
100
= 493Ω –7.3 — +7.8 %
B Constant B
(25/50)
Approximate by Equation
*9
— 3375 — K
Power Dissipation P
25
T
C
= 25°C — — 10 mW
*1 Case temperature (T
C
) and heatsink temperature (T
f
) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*9 B
(25/50)
= In(
R
25
)/(
1
–
1
) R
25
; Resistance at Absolute Temperature T
25
[K], R
50
; resistance at Absolute Temperature T
50
[K],
R
50
T
25
T
50
T
25
= 25 [°C] + 273.15 = 298.15 [K], T
50
= 50 [°C] + 273.15 = 323.15 [K]
