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10TTS08

P1-P3P4-P6
Document Number: 93690 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 19-Jun-08 1
Phase Control SCR, 10 A
10TTS08 High Voltage Series
Vishay High Power Products
DESCRIPTION/FEATURES
The 10TTS08 High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification and crow-bar
(soft start) and these products are designed to be used with
Vishay HPP input diodes, switches and output rectifiers
which are available in identical package outlines.
Also available in SMD-220 package (series 10TTS08S).
This product has been designed and qualified for industrial
level.
PRODUCT SUMMARY
V
T
at 6.5 A < 1.15 V
I
TSM
140 A
V
RRM
800 V
(G) 3
2
(A)
1 (K)
TO-220AB
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
13.5 17 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
Sinusoidal waveform 6.5
A
I
T(RMS)
10
V
RRM
/V
DRM
800 V
I
TSM
140 A
V
T
6.5 A, T
J
= 25 °C 1.15 V
dV/dt 150 V/µs
dI/dt 100 A/µs
T
J
Range - 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
I
RRM
/I
DRM
AT 125 °C
mA
10TTS08 800 800 1.0
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93690
2 Revision: 19-Jun-08
10TTS08 High Voltage Series
Vishay High Power Products
Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 112 °C, 180° conduction half sine wave
6.5
A
Maximum RMS on-state current I
T(RMS)
10
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C 120
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C 140
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C 72
A
2
s
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C 100
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied, T
J
= 125 °C 1000 A
2
√s
Maximum on-state voltage drop V
TM
6.5 A, T
J
= 25 °C 1.15 V
On-state slope resistance r
t
T
J
= 125 °C
17.3 mΩ
Threshold voltage V
T(TO)
0.85 V
Maximum reverse and direct leakage current I
RM
/I
DM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
0.05
mA
T
J
= 125 °C 1.0
Typical holding current I
H
Anode supply = 6 V, resistive load, initial I
T
= 1 A 30
Maximum latching current I
L
Anode supply = 6 V, resistive load 50
Maximum rate of rise of off-state voltage dV/dt T
J
= 25 °C 150 V/µs
Maximum rate of rise of turned-on current dI/dt 100 A/µs
TRIGGERING
PARAMETER SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
P
GM
8.0
W
Maximum average gate power
P
G(AV)
2.0
Maximum peak positive gate current
+I
GM
1.5 A
Maximum peak negative gate voltage
-V
GM
10 V
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
J
= - 65 °C
20
mAAnode supply = 6 V, resistive load, T
J
= 25 °C 15
Anode supply = 6 V, resistive load, T
J
= 125 °C 10
Maximum required DC gate
voltage to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= - 65 °C 1.2
V
Anode supply = 6 V, resistive load, T
J
= 25 °C 1
Anode supply = 6 V, resistive load, T
J
= 125 °C 0.7
Maximum DC gate voltage not to trigger
V
GD
T
J
= 125 °C, V
DRM
= Rated value
0.2
Maximum DC gate current not to trigger
I
GD
0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
gt
T
J
= 25 °C 0.8
µsTypical reverse recovery time t
rr
T
J
= 125 °C
3
Typical turn-off time t
q
100
Document Number: 93690 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 19-Jun-08 3
10TTS08 High Voltage Series
Phase Control SCR, 10 A
Vishay High Power Products
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristic
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 1.5
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC 10TTS08
105
110
115
120
125
01234567
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
10TTS08
R (DC) = 1.5 K/ W
thJC
105
110
115
120
125
024681012
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
10TTS08
R (DC) = 1.5 K/ W
thJC
0
1
2
3
4
5
6
7
8
01234567
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
10TTS08
T = 125°C
J
0
2
4
6
8
10
12
024681012
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
10TTS08
T = 1 2 5 ° C
J
P1-P3P4-P6

10TTS08

Mfr. #:
Buy 10TTS08
Manufacturer:
Vishay Semiconductors
Description:
SCRs RECOMMENDED ALT 78-VS-10TTS08-M3
Lifecycle:
New from this manufacturer.
Delivery:
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