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FVP12030IM3LEG1 Rev. A
FVP12030IM3LEG1 Energy Recovery
Absolute Maximum Ratings (T
C
= 25°C, Unless Otherwise Specified)
Notes :
1. Pulse Width = 100µsec, Duty = 0.1; half sine wave
*Icp limited by MAX Tj
Thermal Resistance
Symbol Parameter Conditions Rating Units
VCC Control Supply Voltage Applied between VCCL-COML, VCCH - COMH 20 V
VBS Control Bias Voltage Applied between VBL - VSL, VBH - VSH 20 V
VIN Input Signal Voltage Applied between VINL-COML,VINH - COMH -0.3~17 V
Symbol Parameter Conditions Rating Units
VCE Collector to Emitter Voltage
Between CL to EL
,
Between CH to EH
V
GH-EH
=V
GL-EL
=0V , I
CH
=I
CL
=250µA
300 V
VRRM Peak Repetitive Reverse Voltage
Between KH to EH
,
Between CL to AL
I
AH
=I
AL
=250µA
300 V
Between CH to EH
,
Between CL to EL
I
AH
=I
AL
=250µA
300 V
VIN Input Signal Voltage VINL, VINH
-0.3 to
VCC+0.3
V
I
C
Collector Current Continuous Between CL to EL
,
Between CH to EH 120 A
I
F(AV)
Average Rectified Forward Current
Between EH to KH
,
Between AL to CL
per diode
30 A
Between EH to CH
Between EL to CL 10 A
I
CP
Pulsed Collector Current Between CL to EL
,
Between CH to EH (Note1) 300 A
I
FP
Pulsed Diode Current
Between EH to KH
,
Between AL to CL(Note1) 300 A
Between EH to CH
Between EL to CL
per diode
(Note1)
100 A
Symbol Parameter Conditions Rating Units
Pd
IGBT Dissipation
Tc=25°C per IGBT 117 W
Tc=100°C per IGBT 47 W
FRD Dissipation
Tc=25°C per diode 109 W
Tc=100°C per diode 43 W
Tj Operating Junction Temperture -20 ~ 150 °C
T
C
Module Case Operation Temperature -20 ~ 125 °C
T
STG
Storage Temperature -40 ~ 125 °C
V
ISO
Isolation Voltage
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS substrate
1500 V
rms
Symbol Parameter Conditions Min. Max. Units
R
th(j-c)
Junction to Case Thermal
Resistance
Between CH to EH, Between CL to EL Per IGBT - 1.07 °C/W
Between EH to KH, Between AL to CL - 1.15 °C/W
Between CH to EH, Between CL to EL Per Diode - 3.70 °C/W
