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SPB80N06S08ATMA1

P1-P3P4-P6P7-P8
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
1 Power dissipation 2 Drain current
P
tot
=f(T
C
) I
D
=f(T
C
); V
GS
=10 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
C
=25 °C; D=0 Z
thJC
=f(t
p
)
parameter: t
p
parameter: D=t
p
/T
10 µs
100 µs
1 ms
10 ms
DC
1
10
100
1000
0.1 1 10 100
V
DS
[V]
I
D
[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
t
p
[s]
Z
thJC
[K/W]
0
50
100
150
200
250
300
350
0 50 100 150 200
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
0 50 100 150 200
T
C
[°C]
I
D
[A]
Rev. 1.0 page 4 2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
parameter: T
j
V 4.5
V 5
V 5.5
V 6
V 6.5
V 7
V 8
V 10
0
5
10
15
20
25
0 20 40 60 80 100 120
I
D
[A]
R
DS(on)
[m
Ω
]
0
10
20
30
40
50
60
70
80
0 20 40 60 80
I
D
[A]
g
fs
[S]
4.5 V
5 V
5.5 V
6 V
6.5 V
V 7
V 8
V 10
0
20
40
60
80
100
120
140
160
0 1 2 3
V
DS
[V]
I
D
[A]
25 °C
175 °C
0
20
40
60
80
100
120
140
160
0 2 4 6 8
V
GS
[V]
I
D
[A]
Rev. 1.0 page 5 2005-06-28
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
9 Typical Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=80 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
GS
=V
DS
parameter: I
D
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(V
DS
); V
GS
=0 V; f=1 MHz I
F
=f(V
SD
)
parameter: T
j
0
2
4
6
8
10
12
14
16
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
Ω
]
µA 240
µA 1200
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
4
10
3
10
2
0 10 20 30 40
V
DS
[V]
C
[pF]
25 °C
175 °C
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
[V]
I
F
[A]
Rev. 1.0 page 6 2005-06-28
P1-P3P4-P6P7-P8

SPB80N06S08ATMA1

Mfr. #:
Buy SPB80N06S08ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_55/60V
Lifecycle:
New from this manufacturer.
Delivery:
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