OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SZMSQA6V1W5T2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
October, 2017 − Rev. 8
1 Publication Order Number:
MSQA6V1W5T2/D
MSQA6V1W5T2G,
SZMSQA6V1W5T2G
ESD Protection Diode Array
Low Clamping Voltage
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Features
• Low Clamping Voltage
• Stand Off Voltage 3 V
• Low Leakage < 1 mA @ 3 V
• SC−88A Package Allows Four Separate Unidirectional
Configurations
• IEC1000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• Pb−Free Package is Available*
Mechanical Characteristics:
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SC−88A/SOT−323
CASE 419A
5
4
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
61 = Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAM
*T2 Suffix Devices are Packaged with Pin 1 Opposing
Sprocket Hole.
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
61 M G
G
MSQA6V1W5T2G SC−88A
(Pb−Free)
3,000 /
Tape & Reel
(Note: Microdot may be in either location)
SZMSQA6V1W5T2G SC−88A
(Pb−Free)
3,000 /
Tape & Reel
SCALE 2:1
MSQA6V1W5T2G, SZMSQA6V1W5T2G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 20 ms
@T
A
≤ 25°C (Note 1)
P
pk
150 W
Steady State Power − 1 Diode (Note 2) P
D
385 mW
Thermal Resistance
Junction−to−Ambient
Above 25°C, Derate
R
q
JA
325
3.1
°C/W
mW/°C
Maximum Junction Temperature T
Jmax
150 °C
Operating Junction and Storage Temperature Range T
J
T
stg
−55 to +150 °C
ESD Discharge
MIL STD 883C − Method 3015−6
IEC1000−4−2, Air Discharge
IEC1000−4−2, Contact Discharge
V
PP
16
16
9
kV
Lead Solder Temperature (10 s duration) T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current per Figure 5. Derate per Figure 10.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR−4 board with min pad.
See Application Note AND8308/D for further description of survivability specs.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
P
pk
Peak Power Dissipation
C Capacitance @ V
R
= 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS
Device*
Breakdown Voltage
V
BR
@ 1 mA (Vo)
(Note 3)
Leakage Current
I
RM
@ V
RWM
= 3 V
(mA)
Capacitance
@ 0 V Bias
(pF)
Max
V
F
@ I
F
= 200
mA
(V)
V
C
Min Nom Max
Per IEC61000−4−2
(Note 4)
MSQA6V1W5T2G 6.1 6.6 7.2 1.0 90 1.25 Figures 1 and 2
See Below
3. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25°C.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
*Include SZ-prefix devices where applicable.
MSQA6V1W5T2G, SZMSQA6V1W5T2G
www.onsemi.com
3
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
IEC 61000−4−2 Spec.
Level
Test Volt-
age (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
I
peak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
t
P
= 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
Figure 4. Diagram of ESD Test Setup
50 W
Cable
Device
Under
Test
Oscilloscope
ESD Gun
50 W
P1-P3P4-P6

SZMSQA6V1W5T2G

Mfr. #:
Buy SZMSQA6V1W5T2G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors MI A TVS QUAD 6.6V TR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet