ST1S30 Electrical characteristics
Doc ID 17927 Rev 1 7/11
Refer to Figure 4 application circuit V
IN_SW
= V
IN_A
= V
INH
= 5 V, V
O
= 1.2 V, C1 = 10 µF, C2
= 22, C3 = 1 µF, L1 = 2.2 µH, T
J
= -25 to 125 °C (unless otherwise specified. Typical values
are referred to 25 °C)
Table 7. Electrical characteristics for ST1S30I
Symbol Parameter Test conditions Min. Typ. Max. Unit
FB Feedback voltage 784 800 816 mV
I
FB
V
FB
pin bias current 600 nA
V
I
Minimum input voltage I
O
= 10 mA to 2 A 2.7 V
OVP
Overvoltage protection
threshold
V
O
rising 1.05 V
O
1.1 V
O
V
Overvoltage protection
hysteresis
V
O
falling 5 %
I
Q
Quiescent current
V
INH
> 1.2 V, not switching 1.5 2.5 mA
V
INH
< 0.0 V, T = - 30 °C to 85 °C 1 µA
I
O
Output current V
I
= 2.7 to 5.5 V
(1)
3A
V
INH
Inhibit threshold
Device ON, V
I
= 2.7 to 5.5 V 1.3
VDevice ON, V
I
= 2.7 to 5 V 1.2
Device OFF 0.4
I
INH
Inhibit pin current 2µA
%V
O
/ΔV
I
Output line regulation V
I
= 2.7 V to 5.5 V, I
O
= 100 mA
(1)
0.16
%V
O
/
ΔV
I
%V
O
/ΔI
O
Output load regulation I
O
= 10 mA to 2 A
(1)
0.2 0.6
%V
O
/
ΔI
O
PWMf
S
PWM switching frequency V
FB
= 0.65 V 1.2 1.5 1.8 MHz
D
MAX
Maximum duty cycle 80 87 %
R
DSON
-N NMOS switch on resistance I
SW
= 750 mA 0.1 Ω
R
DSON
-P PMOS switch on resistance I
SW
= 750 mA 0.1 Ω
I
SWL
Switching current limitation
(1)
3.7 4.4 5.1 A
ν
Efficiency
(1)
I
O
= 10 mA to 100 mA, V
O
= 3.3 V 65
%
I
O
= 100 mA to 3 A, V
O
= 3.3 V 85
T
SHDN
Thermal shutdown 150 °C
T
HYS
Thermal shutdown hysteresis 20 °C
%V
O
/ΔI
O
Load transient response
I
O
= 100 mA to 1 A, T
A
= 25 °C
t
R
= t
F
≥ 200 ns
(1)
-10 +10 %V
O
%V
O
/ΔI
O
Short circuit removal response
I
O
= 10 mA to I
O
= short,
T
A
= 25 °C
(1)
-10 +10 %V
O
1. Guaranteed by design, but not tested in production.
