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IXTP230N04T4M

P1-P3P4-P5
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTP230N04T4M
Fig. 7. Transconductance
0
50
100
150
200
250
300
350
400
450
500
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
V
DS
= 10V
T
J
= - 40
o
C
25
o
C
150
o
C
Fig.89. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20406080100120140
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 20V
I
D
= 115A
I
G
= 10mA
Fig. 10. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 11. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
100μs
1ms
10ms
R
DS(on)
Limit
T
J
= 175
o
C
T
C
= 25
o
C
Sin
le Pulse
DC
External Lead
Current Limit
25μs
100ms
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_230N04T4 (T4-M04) 3-13-17-A
IXTP230N04T4M
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
100
120
140
160
180
200
110 130 150 170 190 210 230
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 10 , V
GS
= 10V
V
DS
= 20V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
700
800
900
1000
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
210
240
270
300
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 150
o
C, V
GS
= 10V
V
DS
= 20V
I
D
= 115A
I
D
= 230A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
0
20
40
60
80
100
120
140
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f
- Nanoseconds
60
70
80
90
100
110
120
130
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 10, V
GS
= 10V
V
DS
= 20V
I
D
= 230A
I
D
= 115A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
70
75
80
85
90
95
100
105
110
110 130 150 170 190 210 230
I
D
- Amperes
t
f
- Nanoseconds
60
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 10, V
GS
= 10V
V
DS
= 20V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
100
120
140
160
180
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10 , V
GS
= 10V
V
DS
= 20V
I
D
= 230A
I
D
= 115A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
10 20 30 40 50 60
R
G
- Ohms
t
f
- Nanoseconds
50
150
250
350
450
550
650
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 150
o
C, V
GS
= 10V
V
DS
= 20V
I
D
= 115A
I
D
= 230A
P1-P3P4-P5

IXTP230N04T4M

Mfr. #:
Buy IXTP230N04T4M
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP
Lifecycle:
New from this manufacturer.
Delivery:
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