2SK2145
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK2145
Audio Frequency Low Noise Amplifier Applications
• Including two devices in SM5 (super mini type with 5 leads.)
• High |Y
fs
|: |Y
fs
| = 15 mS (typ.) at V
DS
= 10 V, V
GS
= 0
• High breakdown voltage: V
GDS
= −50 V
• Low noise: NF = 1.0dB (typ.)
at V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz, R
g
= 1 kΩ
• High input impedance: I
GSS
= −1 nA (max) at V
GS
= −30 V
Marking Pin Assignment
(top view)
Absolute Maximum Ratings
(Ta
=
25°C)
(Q1, Q2 common)
Characteristics Symbol Rating Unit
Gate-drain voltage V
GDS
−50 V
Gate current I
G
10 mA
Drain power dissipation
P
D
(Note 1)
300 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3L1C
Weight: 0.016 g (typ.)
Start of commercial production
1993-03
