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S300ZR

P1-P2
V
RRM
= 1600 V - 2000 V
I
F
=300 A
Features
• High Surge Capability DO-9 Package
• Types up to 2000 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
2000
S300Z (R)S300Y (R)
1600
S300Y thru S300ZR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
pp g
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
0.16
2000
1414
1.2
S300Z (R)
-60 to 200 -60 to 200
S300Y (R)
1.2
10
12
Reverse current
I
R
V
F
1131
1600
300
6850
-60 to 180
V
R
= 1600 V, T
j
= 25 °C
I
F
= 300 A, T
j
= 25 °C
T
C
≤ 130 °C
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
V
R
= 1600 V, T
j
= 175 °C
V
A
-60 to 180
6850
300
0.16
12
10
www.genesicsemi.com
1
S300Y thru S300ZR
www.genesicsemi.com
2
P1-P2

S300ZR

Mfr. #:
Buy S300ZR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 2000V 300A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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