2004 Aug 04 3
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
PDTA124T series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN DESCRIPTION
PDTA124TS 1 base
2 collector
3 emitter
PDTA124TE 1 base
PDTA124TEF 2 emitter
PDTA124TK 3 collector
PDTA124TT
PDTA124TU
PDTA124TM 1 base
2 emitter
3 collector
handbook, halfpage
MAM352
1
2
3
2
3
1
R1
handbook, halfpage
MDB272
Top view
1
2
3
1
2
3
R1
MDB268
handbook, halfpage
2
1
3
Bottom view
1
2
3
R1
2004 Aug 04 4
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
PDTA124T series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PDTA124TE plastic surface mounted package; 3 leads SOT416
PDTA124TEF plastic surface mounted package; 3 leads SOT490
PDTA124TK plastic surface mounted package; 3 leads SOT346
PDTA124TM leadless ultra small plastic package; 3 solder lands; body
1.0
× 0.6 × 0.5 mm
SOT883
PDTA124TS plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTA124TT plastic surface mounted package; 3 leads SOT23
PDTA124TU plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 50 V
V
CEO
collector-emitter voltage open base 50 V
V
EBO
emitter-base voltage open collector 5 V
I
O
output current (DC) 100 mA
I
CM
peak collector current 100 mA
P
tot
total power dissipation T
amb
25 °C
SOT23 note 1 250 mW
SOT54 note 1 500 mW
SOT323 note 1 200 mW
SOT346 note 1 250 mW
SOT416 note 1 150 mW
SOT490 notes 1 and 2 250 mW
SOT883 notes 2 and 3 250 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C
2004 Aug 04 5
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
PDTA124T series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
SOT23 note 1 500 K/W
SOT54 note 1 250 K/W
SOT323 note 1 625 K/W
SOT346 note 1 500 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 A 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 A 1 μA
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150 °C
50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 A 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 1 mA 100
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA 150 mV
R1 input resistor 15.4 22 28.6 kΩ
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f
= 1 MHz
3 pF

PDTA124TM,315

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased TRANS RET TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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