SS1H4LW RVG

SS1H4LW-SS1H20LW
CREAT BY ART
- Low power loss, high efficiency
- Ideal for automated placement
- High surge current capability
- Halogen-free according to IEC 61249-2-21
Case: SOD-123W
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
1H4LW 1H6LW 1H10LW 1H15LW 1H20LW
V
RRM
40 60 100 150 200 V
V
RMS
28 42 70 105 140 V
V
DC
40 60 100 150 200 V
I
F(AV)
A
µA
0.1 mA
T
J
°C
T
STG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Version: A1606
UNIT
SS1H20LWSS1H10LWSS1H6LWSS1H4LW
30 A
1
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Marking Code
Polarity: Indicated by cathode band
Weight: 16 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
SS1H15LW
SYMBOL
Taiwan Semiconductor
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
1A, 40V - 200V Surface Mount Schottk
y
Barrier Rectifiers
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
V
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
0.65
Maximum reverse current @ rated V
R
0.70
I
FSM
Maximum repetitive peak reverse voltage
0.850.80
T
J
=25°C
I
R
T
J
=125°C
°C/WTypical thermal resistance
R
θJL
R
θJA
25
80
Operating junction temperature range
Storage temperature range
0.3
0.5
0.2
SOD-123W
- 55 to +175
- 55 to +175
Note 1: "x" defines voltage from 40V (SS1H4LW) to 200V (SS1H20LW)
Note 2: Whole series with green compound (halogen-free)
Version: A1606
SS1HxLW
(Note 1, 2)
G
PART NO.
SUFFIX
PACKING CODE
SS1H4LW-SS1H20LW
Taiwan Semiconductor
ORDERING INFORMATION
PACKING CODE
SUFFIX
PACKAGE
PACKING CODE
SUFFIX
PART NO.
EXAMPLE
PACKING CODE
PART NO.
PACKING
H
10,000 / 13" Paper reel
3,000 / 7" Plastic reelRV
G
RQ
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
SS1H4LWHRVG SS1H4LW H RV
SOD-123W
AEC-Q101 qualified
Green compound
EXAMPLE P/N DESCRIPTION
PART NO.
SUFFIX
0
0.25
0.5
0.75
1
1.25
0 25 50 75 100 125 150 175
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (
°
C)
FIG.1 FORWARD CURRENT DERATING CURVE
Resistive or
inductive load
0
10
20
30
40
50
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms single half sine wave
0.001
0.01
0.1
1
10
100
0 20406080100
INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
T
J
=125°C
T
J
=25°C
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
Pulse width=300μs
1% duty cycle
SS1H15LW
SS1H20LW
SS1H10LW
SS1H4LW
SS1H6LW
Min Max Min Max
B 1.70 1.90 0.067 0.075
C 2.60 2.90 0.102 0.114
D 0.10 0.22 0.004 0.009
E 0.90 1.02 0.035 0.040
F 0.90 1.05 0.035 0.041
G 3.60 3.80 0.142 0.150
H 0.50 0.85 0.020 0.033
I 0.00 0.10 0.000 0.004
P/N = Marking Code
YW = Date Code
F = Factory Code
Version: A1606
MARKING DIAGRAM
SOD-123W
DIM.
Unit (mm) Unit (inch)
A 1.4 0.055
B1.2
SS1H4LW-SS1H20LW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SUGGESTED PAD LAYOUT
Symbol Unit (mm) Unit (inch)
E 4.3 0.169
0.047
C 3.1 0.122
D 1.9 0.075
1
10
100
1000
0.1 1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
SS1H15LW
SS1H20LW
SS1H10LW
SS1H4LW
SS1H6LW

SS1H4LW RVG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers 1A, 40V, SM Schottky barrier Rectifiers
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union