TSM2323
20V P-Channel MOSFET
Document Number:
DS_P0000058 1
Version: F15
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM2323CX RFG
SOT-23 3Kpcs / 7” Reel
Note: “G” denote for Green Product
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
-20 V
Gate-Source Voltage
V
GS
±8 V
Continuous Drain Current, V
GS
@ 4.5V.
I
D
-4.7 A
Pulsed Drain Current, V
GS
@ 4.5V
I
DM
-20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
-1.0 A
Maximum Power Dissipation
Ta = 25°C
P
D
1.25
W
Ta = 70°C
0.8
Operating Junction Temperature
T
J
+150
°C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
75 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
120 °C/W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
-20
39 @ V
GS
= -4.5V -4.7
52 @ V
GS
= -2.5V -4.1
68 @ V
GS
= -1.8V -2.0
Pin Definition:
1. Gate
2. Source
3. Drain
P-Channel MOSFET
