IXYS reserves the right to change limits, test conditions, and dimensions.
FMM22-05PF
ISOPLUS i4-Pak
TM
Outline
Ref: IXYS CO 0077 R0
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions
2
Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA 3.0 5.0 V
I
GSS
V
GS
= ±30 V, V
DS
= 0V ± 100 nA
I
DSS
V
DS
= V
DSS
5 μA
V
GS
= 0V T
J
= 125°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 11A, Note 1 270 mΩ
g
fs
V
DS
= 20V, I
D
= 11A, Note 1 20 S
C
iss
2630 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 310 pF
C
rss
27 pF
t
d(on)
Resistive Switching Times 22 ns
t
r
V
GS
= 10V, V
DS
= 0.5 z V
DSS
, I
D
= 22A 25 ns
t
d(off)
R
G
= 10Ω (External) 72 ns
t
f
21 ns
Q
g(on)
50 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 z V
DSS
, I
D
= 11A 16 nC
Q
gd
18 nC
R
thJC
0.95 °C/W
R
thCS
0.15 °C/W
Source-Drain Diode Characteristic Values
T
J
= 25°C unless otherwise specified)
Symbol Test Conditions
3
Min. Typ. Max.
I
S
V
GS
= 0V 13 A
I
SM
Repetitive, pulse width limited by T
JM
55 A
V
SD
I
F
= 22A, V
GS
= 0V, Note 1 1.5 V
t
rr
200 ns
I
RM
7.0 A
Q
RM
0.7 μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
I
F
= 22A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
