CY62167DV30 MoBL
®
Document Number: 38-05328 Rev. *M Page 7 of 18
Switching Characteristics
Over the Operating Range
Parameter
[13]
Description
55 ns 70 ns
Unit
Min Max Min Max
Read Cycle
t
RC
Read cycle time 55 70 ns
t
AA
Address to data valid 55 70 ns
t
OHA
Data hold from address change 10 10 ns
t
ACE
CE
1
LOW and CE
2
HIGH to data valid 55 70 ns
t
DOE
OE LOW to data valid 25 35 ns
t
LZOE
OE LOW to low Z
[14]
5 5 ns
t
HZOE
OE HIGH to high Z
[14, 15]
20 25 ns
t
LZCE
CE
1
LOW and CE
2
HIGH to low Z
[14]
10 10 ns
t
HZCE
CE
1
HIGH and CE
2
LOW to high Z
[14, 15]
20 25 ns
t
PU
CE
1
LOW and CE
2
HIGH to power-up 0 0 ns
t
PD
CE
1
HIGH and CE
2
LOW to power-down 55 70 ns
t
DBE
BLE/BHE LOW to data valid 55 70 ns
t
LZBE
BLE/BHE LOW to low Z
[14]
10 10 ns
t
HZBE
BLE/BHE HIGH to high Z
[14, 15]
20 25 ns
Write Cycle
[16]
t
WC
Write cycle time 55 70 ns
t
SCE
CE
1
LOW and CE
2
HIGH
to write end 40 60 ns
t
AW
Address setup to write end 40 60 ns
t
HA
Address hold from write end 0 0 ns
t
SA
Address setup to write start 0 0 ns
t
PWE
WE pulse width 40 45 ns
t
BW
BLE/BHE LOW to write end 40 60 ns
t
SD
Data setup to write end 25 30 ns
t
HD
Data hold from write end 0 0 ns
t
HZWE
WE LOW to high-Z
[14, 15]
20 25 ns
t
LZWE
WE HIGH to low-Z
[14]
10 10 ns
Notes
13. Test conditions for all parameters other than Tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of V
CC(typ)
/2, input pulse levels of
0 to V
CC(typ.)
, and output loading of the specified I
OL
/I
OH
as shown in the “AC Test Loads and Waveforms” section.
14. At any temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any device.
15. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high impedance state.
16. The internal Write time of the memory is defined by the overlap of WE
, CE
1
= V
IL
, BHE and/or BLE = V
IL
, and CE
2
= V
IH
. All signals must be ACTIVE to initiate a
write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that
terminates the Write.
CY62167DV30 MoBL
®
Document Number: 38-05328 Rev. *M Page 8 of 18
Switching Waveforms
Figure 5. Read Cycle 1 (Address Transition Controlled)
[17, 18]
Figure 6. Read Cycle 2 (OE Controlled)
[18, 19]
PREVIOUS DATA VALID DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
PD
t
HZBE
t
LZBE
t
HZCE
t
DBE
HIGH
I
CC
I
SB
IMPEDANCE
OE
CE
1
ADDRESS
V
CC
SUPPLY
CURRENT
BHE
/BLE
DATA OUT
CE
2
Notes
17. The device is continuously selected. OE
, CE
1
= V
IL
, BHE and/or BLE = V
IL
, and CE
2
= V
IH
.
18. WE
is HIGH for read cycle.
19. Address valid prior to or coincident with CE
1
, BHE, BLE transition LOW and CE
2
transition HIGH.
CY62167DV30 MoBL
®
Document Number: 38-05328 Rev. *M Page 9 of 18
Figure 7. Write Cycle 1 (WE Controlled)
[20, 21, 22]
Switching Waveforms (continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
VALID DATA
t
BW
See Note 23
ADDRESS
WE
DATA
I/O
OE
BHE/BLE
CE
1
CE
2
Notes
20. The internal Write time of the memory is defined by the overlap of WE
, CE
1
= V
IL
, BHE and/or BLE = V
IL
, and CE
2
= V
IH
. All signals must be ACTIVE to initiate a
write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that
terminates the Write.
21. Data I/O is high-impedance if OE
= V
IH
.
22. If CE
1
goes HIGH and CE
2
goes LOW simultaneously with WE = V
IH
, the output remains in a high-impedance state.
23. During this period, the I/Os are in output state and input signals should not be applied.

CY62167DV30LL-70BVI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 16Mb 3V 70ns 1M x 16 LP SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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