IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXX140N65B4H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 40 70 S
C
ies
8000 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 560 pF
C
res
107 pF
Q
g(on)
250 nC
Q
ge
I
C
= 140A, V
GE
= 15V, V
CE
= 0.5 • V
CES
70 nC
Q
gc
90 nC
t
d(on)
54 ns
t
ri
105 ns
E
on
5.75 mJ
t
d(off)
270 ns
t
fi
44 ns
E
off
2.67 mJ
t
d(on)
43 ns
t
ri
85 ns
E
on
6.80 mJ
t
d(off)
240 ns
t
fi
100 ns
E
off
3.90 mJ
R
thJC
0.125 °C/W
R
thCS
0.15 °C/W
Inductive load, T
J
= 150°C
I
C
= 100A, V
GE
= 15V
V
CE
= 400V, R
G
= 4.7
Note 2
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 100A, V
GE
= 0V, Note 1 2.1 2.5 V
T
J
= 150°C 2.2 V
I
RM
43 A
t
rr
210 ns
R
thJC
0.24 °C/W
I
F
= 100A, V
GE
= 0V, T
J
= 150°C
-di
F
/dt = 600A/sV
R
= 400V
Inductive load, T
J
= 25°C
I
C
= 100A, V
GE
= 15V
V
CE
= 400V, R
G
= 4.7
Note 2
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
PLUS247
TM
Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
