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SMMBD770T1G

P1-P3P4-P5
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1 Publication Order Number:
MMBD330T1/D
MMBD330T1G,
SMMBD330T1G,
MMBD770T1G,
SMMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high−efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT−323/SC−70 package which is designed for low−power surface
mount applications.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
V
R
30
70
Vdc
Forward Continuous Current (DC) I
F
200 mA
Nonrepetitive Peak Forward Current
(Note 1)
I
FSM
1.0 A
Forward Power Dissipation
T
A
= 25C
P
F
120
mW
Junction Temperature T
J
−55 to +125 C
Storage Temperature Range T
stg
−55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
*Date Code orientation may vary depending
upon the manufacturing location.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAMS
SC−70/SOT−323
CASE 419
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD770T1G SC−70
(Pb−Free)
3,000/Tape & Reel
13
MMBD330T1G SC−70
(Pb−Free)
3,000/Tape & Reel
XX M G
G
1
XX = Specific Device Code
4T = MMBD330T1
5H = MMBD770T1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
SMMBD330T1G SC−70
(Pb−Free)
3,000/Tape & Reel
SMMBD770T1G SC−70
(Pb−Free)
3,000/Tape & Reel
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
V
(BR)R
30
70
−
−
−
−
Volts
Diode Capacitance
(V
R
= 15 Volts, f = 1.0 MHZ)
MMBD330T1G, SMMBD330T1G
(V
R
= 20 Volts, f = 1.0 MHZ)
MMBD770T1G, SMMBD770T1G
C
T
−
−
0.9
0.5
1.5
1.0
pF
Reverse Leakage
(V
R
= 25 V)
MMBD330T1G, SMMBD330T1G
(V
R
= 35 V)
MMBD770T1G, SMMBD770T1G
I
R
−
−
13
9.0
200
200
nAdc
Forward Voltage
(I
F
= 1.0 mAdc)
MMBD330T1G, SMMBD330T1G
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
MMBD770T1G, SMMBD770T1G
(I
F
= 10 mA)
V
F
−
−
−
−
0.38
0.52
0.42
0.70
0.45
0.60
0.50
1.0
Vdc
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
MMBD330T1G, SMMBD330T1G
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
I
F
, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
KRAKAUER METHOD
f = 1.0 MHz
, FORWARD CURRENT (mA)I
F
, REVERSE LEAKAGE ( A)I
R
m
0.2 0.4 0.6 0.8 1.0 1.20 6.0 12 18 24
10
1.0
0.1
0.01
0.001
0204060
500
0
80 1000 3.0 6.0 9.0 12 15 21
2.8
3024 2718
2.4
2.0
1.6
1.2
0.8
0
100
10
1.0
0.1
30
10 30 50 70 90
400
300
200
100
0.4
, MINORITY CARRIER LIFETIME (ps)t
, TOTAL CAPACITANCE (pF)C
T
T
A
= -40C
T
A
= 85C
T
A
= 25C
T
A
= 100C
T
A
= 75C
T
A
= 25C
MMBD330T1
MMBD330T1
MMBD330T1
MMBD330T1
P1-P3P4-P5

SMMBD770T1G

Mfr. #:
Buy SMMBD770T1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SS SHKY DIO 70V TR
Lifecycle:
New from this manufacturer.
Delivery:
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