2002 Nov 22 3
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC817DPN
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Notes
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
2. V
BE
decreases by approximately −2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 208 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current V
CB
= 20 V; I
E
= 0 − − 100 nA
V
CB
= 20 V; I
E
= 0; T
j
= 150 °C − − 5 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 1 V; I
C
= 100 mA; note 1 160 − 400
V
CE
= 1 V; I
C
= 500 mA; note 1 40 − −
V
CEsat
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA; note 1 − − 700 mV
V
BE
base-emitter voltage V
CE
= 1 V; I
C
= 500 mA;
notes
1 and 2
− − 1.2 V
NPN transistor
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz − 5 − pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA;
f
= 100 MHz
100 − − MHz
PNP transistor
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0; f = 1 MHz − 9 − pF
f
T
transition frequency V
CE
= −5 V; I
C
= −10 mA;
f
= 100 MHz
80 − − MHz
