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STK541UC62K-E

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number :
October 2016 - Rev. 1 STK541UC62K-E/D
www.onsemi.com
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of this data sheet.
STK541UC62K-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High Voltage
(HV) control from HV-DC to 3-phase outputs in a single SIP module
(Single-In line Package). Output stage uses IGBT/FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection
(OCP) with a Fault Detection output flag. Internal Boost diodes are provided
for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in cross conduction prevention
Externally accessible embedded thermistor for substrate temperature
measurement
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings
at Tc = 25C
Parameter Symbol Conditions Ratings Unit
Supply voltage
V
CC
P to N, surge < 500 V *1 450 V
Collector-emitter voltage
V
CE
P to U, V, W or U, V, W to N 600 V
Output current Io
P, N, U, V, W terminal current ±10 A
P, N, U, V, W terminal current at Tc = 100C
±5 A
Output peak current Iop P, N, U, V, W terminal current for a Pulse width of 1 ms. ±20 A
Pre-driver voltage VD1, 2, 3, 4
VB1 to U, VB2 to V, VB3 to W, V
DD
to V
SS
*2 20 V
Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3
0.3 to 7
V
FLTEN terminal voltage VFLTEN FLTEN terminal
0.3 to V
DD
V
Maximum power dissipation Pd IGBT per channel 22 W
Junction temperature Tj IGBT, FRD 150
C
Storage temperature Tstg
40 to +125 C
Operating substrate
temperature
Tc IPM case temperature
40 to +100 C
Tightening torque Case mounting screws *3 0.9 Nm
Isolation voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between “P” and “N” terminal.
*2 : Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V
DD
to V
SS
*3 : Flatness of the heat-sink should be 0.15 mm and below.
*4 : Test conditions : AC 2500 V, 1 s.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
STK541UC62K-E
www.onsemi.com
2
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter Symbol Conditions
Test
circuit
min typ max Unit
Power output section
Collector-emitter cut-off current
I
CE
V
CE
= 600 V
Fig.1
0.1
mA
Bootstrap diode reverse current IR(BD) VR(BD)
0.1
mA
Collector to emitter
saturation voltage
V
CE
(sat)
Ic = 10 A
Tj = 25C
Upper side
Fig.2
1.4 2.3
V
Lower side *1
1.7 2.6
Ic = 5 A
Tj = 100C
Upper side
1.3
Lower side *1
1.6
Diode forward voltage VF
IF = 10 A
Tj = 25C
Upper side
Fig.3
1.3 2.2
V
Lower side *1
1.6 2.5
IF = 5 A
Tj = 100C
Upper side
1.2
Lower side *1
1.5
Junction to case
thermal resistance
θj-c(T) IGBT
5.5
C/W
θj-c(D) FRD
6.5
Control (Pre-driver) section
Pre-driver current consumption ID
VD1, 2, 3 = 15 V
Fig.4
0.08 0.4
mA
VD4 = 15 V
1.6 4.0
High level Input voltage Vin H
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3 to V
SS
2.5
V
Low level Input voltage Vin L
0.8 V
Input threshold voltage hysteresis *1 Vinth(hys)
0.5 0.8
V
Logic 0 input leakage current I
IN+
VIN = +3.3 V
76 118 160 A
Logic 1 input leakage current I
IN-
VIN = 0 V
97 150 203 A
FLTEN terminal input electric current IoSD FAULT : ON/VFLTEN = 0.1 V
2 mA
FAULT clearance delay time FLTCLR Fault output latch time
6 9 12 ms
FLTEN Threshold
V
EN+
Enable
2.5
V
V
EN-
Disable
0.8
V
CC
and V
S
undervoltage upper
threshold
V
CCUV+
V
SUV+
10.5 11.1 11.7 V
V
CC
and V
S
undervoltage lower
threshold
V
CCUV-
V
SUV-
10.3 10.9 11.5 V
V
CC
and V
S
undervoltage hysteresis
V
CCUVH
V
SUVH-
0.14 0.2
A
Over current protection level ISD PW = 100 μs Fig.5
10
17 A
Output level for current monitor ISO Io = 10 A
0.30 0.33 0.36 V
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
*1 : The lower side’s V
CE
(sat) and VF include a loss by the shunt resistance
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V, V
CC
= 300 V, L = 3.9 mH
Parameter Symbol Conditions
Test
circuit
min typ max Unit
Switching Character
Switching time
tON Io = 10 A
Inductive load
Fig.6
0.2 0.4 1.1
s
tOFF
0.5 1.2
Turn-on switching loss
Eon
Ic = 5 A, P = 300 V,
V
DD
= 15 V, L = 3.9 mH
Tc = 25C
Fig.6
200
J
Turn-off switching loss Eoff
130
J
Total switching loss Etot
330
J
Turn-on switching loss
Eon
Ic = 5 A, P = 300 V,
V
DD
= 15 V, L = 3.9 mH
Tc = 100C
Fig.6
240
J
Turn-off switching loss Eoff
160
J
Total switching loss Etot
400
J
Diode reverse recovery energy Erec
I
F
= 5 A, P = 400 V, V
DD
= 15 V,
L = 0.5 mH, Tc = 100C
17
J
Diode reverse recovery time Trr
62
ns
Reverse bias safe operating area RBSOA Io = 20 A, V
CE
= 450 V
Full square
Short circuit safe operating area SCSOA V
CE
= 400 V, Tc = 100C
4
s
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
Notes :
1. The pre-drive power supply low voltage protection has approximately 0.2 V of hysteresis and operates as follows.
Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue till the input signal will
turn ‘high’.
Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal voltage.
2. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating malfunction.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
STK541UC62K-E
www.onsemi.com
3
Equivalent Block Diagram
VB1(7)
U(8)
VB2(4)
V(5)
VB3(1)
W(2)
P
(
10
)
N
(
12
)
HIN1(15)
HIN2(16)
HIN3(17)
LIN1(18)
LIN2(19)
LIN3(20)
FLTEN(21)
ISO(22)
VDD(14)
VSS(23)
Logic
Level
Shifter
Logic
Level
Shifter
Logic
Level
Shifter
Shunt Resisto
r
Latch
Over-Current
VDD-Under Voltage
U.V.
U.V.
U.V.
Latch Time About 9ms
( Automatic Reset )
VTH (13)
Thermisto
r
P1-P3P4-P6P7-P9P10-P12P13-P14

STK541UC62K-E

Mfr. #:
Buy STK541UC62K-E
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers 3PHASE INVERTER HIC
Lifecycle:
New from this manufacturer.
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