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HMC327MS8GE

P1-P3P4-P6P7-P7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 2
LINEAR & POWER AMPLIFIERS - SMT
HMC327MS8G / 327MS8GE
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
v06.1209
General Description
Features
Functional Diagram
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power ampli er which operates between 3 and 4 GHz.
The ampli er is packaged in a low cost, surface mo-
unt 8 leaded package with an exposed base for
improved RF and thermal performance. With a mini-
mum of external components, the ampli er provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
ampli er is not in use.
High Gain: 21 dB
Saturated Power: +30 dBm @ 45% PAE
Output P1dB: +27 dBm
Single Supply: +5V
Power Down Capability
Low External Part Count
Compact MSOP Package: 14.8 mm
2
Electrical Speci cations, T
A
= +25 °C, Vs = 5V, Vctl = 5V
Typical Applications
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
• WiMAX & Fixed Wireless
• Access Points
• Subscriber Equipment
Parameter Min. Typ. Max. Units
Frequency Range 3 - 4 GHz
Gain 17 21 24 dB
Gain Variation Over Temperature 0.025 0.035 dB / °C
Input Return Loss 15 dB
Output Return Loss 8dB
Output Power for 1dB Compression (P1dB) 24 27 dBm
Saturated Output Power (Psat) 30 dBm
Output Third Order Intercept (IP3) 36 40 dBm
Noise Figure 5dB
Supply Current (Icq) Vctl* = 0V/5V 0.002 / 250 mA
Control Current (Ipd) Vctl* = 5V 7 mA
Switching Speed tON, tOFF 40 ns
*See Application Circuit for proper biasing con guration.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC327* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
• HMC327MS8G Evaluation Board
DOCUMENTATION
Application Notes
• Broadband Biasing of Amplifiers General Application Note
• MMIC Amplifier Biasing Procedure Application Note
• Thermal Management for Surface Mount Components
General Application Note
Data Sheet
• HMC327 Data Sheet
TOOLS AND SIMULATIONS
• HMC327 S-Parameter
REFERENCE MATERIALS
Quality Documentation
• HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
• Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
• PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
• Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
• HMC327 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
DISCUSSIONS
View all HMC327 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not
trigger a change to either the revision number or the content of the product data sheet. This dynamic page may be frequently modified.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 3
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Los
s Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-15
-5
5
15
25
2 2.5 3 3.5 4 4.5 5
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
14
18
22
26
30
34
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
14
18
22
26
30
34
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
2.5 3 3.5 4 4.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6P7-P7

HMC327MS8GE

Mfr. #:
Buy HMC327MS8GE
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier MMIC pow amp SMT, 3 - 4 GHz
Lifecycle:
New from this manufacturer.
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