2N6213

TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/461

Devices Qualified Level

2N6211 2N6212 2N6213

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings Symbol

2N6211

2N6212

2N6213

Unit

Collector-Emitter Voltage

V

CEO

225 300 350 Vdc

Collector-Base Voltage

V

CBO

275 350 400 Vdc

Emitter-Base Voltage

V

EBO

6.0 Vdc

Base Current I

B

1.0 Adc

Collector Current

I

C

2.0 Adc

Total Power Dissipation @ T

A

= +25

0

C

(1)

@ T

C

= +25

0

C

(2)

P

T

3.0

35

W

W

Operating & Storage Temperature

T

op

,

T

stg

-55 to +200

0

C

THERMAL CHARACTERISTICS

Characteristics Symbol

Max. Unit

Thermal Resistance Junction-to-Case

R

θJC

5.0

0

C/W

1) Derate linearly 17.1 mW/

0

C for T

A

> +25

0

C

2) Derate linearly 200 mW/

0

C for T

C

> +25

0

C

TO-66*

(TO-213AA)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

C

= 25

0

C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz 2N6211

2N6212

2N6213

V

(BR)

CEO

225

300

350

Vdc

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz, R

BE

= 50 Ω 2N6211

2N6212

2N6213

V

(BR)

CER

250

325

375

Vdc

Collector-Emitter Breakdown Voltage

I

C

= 200 mAdc, f = 30-60 Hz, R

BE

= 50 Ω, V

BE

= -1.5 Vdc

2N6211

2N6212

2N6213

V

(BR)

CEX

275

350

400

Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N6211, 2N6212, 2N6213 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

Collector-Emitter Cutoff Current

V

CE

= 150 Vdc

I

CEO

5.0 mAdc

Collector-Emitter Cutoff Current

V

CE

= 250 Vdc, V

BE

= 1.5 Vdc 2N6211

V

CE

= 315 Vdc, V

BE

= 1.5 Vdc 2N6212

V

CE

= 360 Vdc, V

BE

= 1.5 Vdc 2N6213

I

CEX

0.5

0.5

0.5

mAdc

Collector-Base Cutoff Current

V

CB

= 275 Vdc 2N6211

V

CB

= 350 Vdc 2N6212

V

CB

= 400 Vdc 2N6213

I

CBO

15

15

15

mAdc

Emitter-Base Cutoff Current

V

EB

= 6.0 Vdc

I

EBO

0.5 mAdc

ON CHARACTERISTICS

(3)

Forward-Current Transfer Ratio

I

C

= 1.0 Adc, V

CE

= 2.8 Vdc 2N6211

I

C

= 1.0 Adc, V

CE

= 3.2 Vdc 2N6212

I

C

= 1.0 Adc, V

CE

= 4.0 Vdc 2N6213

I

C

= 1.0 Adc, V

CE

= 5.0 Vdc 2N6211

2N6212

2N6213

h

FE

10

10

10

30

30

30

100

100

100

175

175

150

Collector-Emitter Saturation Voltage

I

C

= 1.0 Adc, I

B

= 0.125 Adc 2N6211

2N6212

2N6213

V

CE(sat)

1.4

1.6

2.0

Vdc

Base-Emitter Saturation Voltage

I

C

= 1.0 Adc, I

B

= 0.125 Adc

V

BE(sat)

1.4 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

I

C

= 0.2 Adc, V

CE

= 10 Vdc, f = 5.0 MHz

h

fe



4.0 20

Output Capacitance

V

CB

= 10 Vdc, I

E

= 0, 100 kHz ≤ f ≤ 1.0 MHz

C

obo

220 pF

SWITCHING CHARACTERISTICS

Turn-On Time

V

CC

= 200 ± 10 Vdc; I

C

= 1.0 Adc; I

B1

= -0.125 Adc

t

on

0.6

µs

Turn-Off Time

V

CC

= 200 ± 10 Vdc; I

C

= 1.0 Adc; I

B1

= -0.125 Adc, I

B2

= 0.125Adc

t

off

3.1

µs

SAFE OPERATING AREA

DC Tests

T

C

= +25

0

C, 1 Cycle, t = 1.0 s

Test 1

V

CE

= 17.5 Vdc, I

C

= 2.0 Adc All Types

Test 2

V

CE

= 40 Vdc, I

C

= 0.875 Adc All Types

Test 3

V

CE

= 225 Vdc, I

C

= 0.034 Adc 2N6211

Test 4

V

CE

= 300 Vdc, I

C

= 0.02 Adc 2N6212

Test 5

V

CE

= 350 Vdc, I

C

= 0.015 Adc 2N6213

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

2N6213

Mfr. #:

Manufacturer:

Central Semiconductor

Description:

Bipolar Transistors - BJT . .

Lifecycle:

New from this manufacturer.

Delivery:

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