UMZ7NTR

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c
2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
Abbreviated symbol
: Z7
Each lead has same dimensions
0to0.1
(
6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
(
1
)
0.65
(
4
)
(
3
)
(
2
)
(
5
)
UMZ7N
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol
: Z7
Each lead has same dimensions
0.22
1.2
1.6
(
1
)
(
2
)(
5
)
(
3
)
(
6
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
EMZ7
ROHM : EMT6
General purpose transistor (dual transistors)
EMZ7 / UMZ7N
Features Dimensions (Unit : mm)
1) Both a 2SA2018 chip and 2SC5585 chip in
a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low V
CE(sat)
Structure
NPN / PNP epitaxial planar silicon transistor
Inner circuit
Tr2
Tr1
(3)
EMZ7 / UMZ7N
(2) (1)
(4) (5) (6)
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Limits
Unit
Tr
1
Tr
2
V
CBO
15
15 V
V
CEO
12
12
V
V
EBO
6
6
V
I
C
I
CP
500
500
mA
1
1
A
Tj 150
°C
Tstg
55 to +150
°C
P
C
150(TOTAL)
mW
1
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
1 120mW per element must not be exceeded.
2/4
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c
2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
Data Sheet
EMZ7 / UMZ7N
Electrical characteristics (Ta=25C)
Tr1 (NPN)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
15
12
6
270
320
7.5
0.1
0.1
90
680
250
VI
C
=
10μA
I
C
=
1mA
I
E
=
10μA
V
CB
=
15V
V
EB
=
6V
V
CE
/I
C
=
2V/10mA
V
CE
=
2V, I
C
=
10mA, f=
100MHz
I
C
/I
B
=
200mA
/10mA
V
CB
=
10V, I
E
=
0A, f=
1MHz
V
V
μA
μA
mV
MHz
pF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Tr
2 (PNP)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
Cob
Min.
15
12
6
270
I
C=
10μA
I
C=
1mA
I
E=
10μA
V
CB=
15V
V
EB=
6V
V
CE
/I
C=
2V/10mA
V
CE=
2V, I
C=
10mA, f
=
100MHz
I
C
/I
B=
200mA/10mA
V
CB=
10V, I
E=
0A, f
=
1MHz
260
100
6.5
Typ.
0.1
0.1
680
250
Max.
V
V
V
μA
μA
mV
MHz
pF
Unit
Conditions
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Packaging specifications
UMZ7N
EMZ7
TR
3000
T2R
8000
Taping
Part No.
Packaging type
Code
Basic ordering unit (pieces)
3/4
www.rohm.com
c
2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
Data Sheet
EMZ7 / UMZ7N
Electrical characteristic curves
Tr
1 (NPN)
0
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
100
0.5 1.0 1.5
V
CE
=2V
1000
Ta =
1
25
°
C
25
°
C
40
°
C
2
5
20
50
200
500
1 2 5 10 20 50 100 200 500
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
10
DC CURRENT GAIN : h
FE
1000
20
50
100
200
500
1000
Ta=
1
25°C
5
2
1
VCE=2V
25°C
40°C
1
2
5
10
20
50
100
200
I
C
/I
B
=20
1 2 5 10 20 50 100 200 5001000
COLLECTOR SATURATION VOLTAGE : V
CE
(sat)
(mV)
Ta
=
1
25°C
500
1000
25°C
40°C
COLLECTOR CURRENT : I
C
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : VCE
(sat)
(
V)
1
2
5
10
20
50
100
200
Ta=25°C
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=
50
500
1000
20
10
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10
20
50
100
200
500
1000
2000
I
C
/I
B
=
20
1 2 5 10 20 50 100 200 5001000
BASE SATURATION VOLTAGE : V
BE
(sat)
(mV)
Ta=−
40
°C
5000
10000
25°C
125°C
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
2
1
5
10
20
50
100 200
5001000
1
2
5
10
20
50
100
200
500
1000
Ta
=
25˚C
V
CE=
2V
f
T (
MH
Z)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Pulsed
Fig.6
Collector output capacitance
Emitter input capacitance
vs. base voltage
0.20.1 0.5 1 2 5 10 20 50 100
1
2
5
10
20
50
100
200
500
1000
Ta
=
25°C
I
E=
0A
f
=
1MHz
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cib
Cob
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage

UMZ7NTR

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN/PNP 12V 500MA
Lifecycle:
New from this manufacturer.
Delivery:
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