SMD Schottky Barrier Rectifiers
Page 1
REV: C
Features
-Ultra high-speed switching.
Mechanical data
-Case: Molded plastic, DO-214AC / SMA
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.055 grams
CDBA540-G Thru. CDBA5200-G
Maximum Ratings and Electrical Characteristics
QW-BB037
Comchip Technology CO., LTD.
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Forward surge current
Reverse Current
Storage temperature
UnitsSymbolParameter
VRRM
VDC
VRMS
V
V
V
A
A
mA
Max. instantaneous forward voltage @
5.0A, TA=25°C
VF
CDBA
540-G
40
40
28
0.55
CDBA
560-G
60
60
42
0.75
CDBA
5100-G
100
100
70
0.81
CDBA
5150-G
150
150
105
0.87
V
CDBA
5200-G
200
200
140
0.90
Operating Temperature
TJ
-50 to +150 -50 to +175
°C
Parameter
Conditions
on rate load (JEDEC method)
8.3ms single half sine-wave superimposed
Forward rectified current
see Fig.1
Thermal Resistance
Diode Junction capacitance
VR =VRRM TA=25°C
VR =VRRM TA=100°C
f=1MHZ and applied 4V DC reverse Voltage
Junction to ambient
Symbol
IO
IFSM
IR
RθJA
CJ
TSTG
IR
MIN. TYP. MAX.
mA
°C/W
pF
°C
5.0
125
0.5
20
24
380
-50 +175
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guard ring for overvoltage protection.
Units
-Epoxy: UL94-V0 rate flame retardant.
-Silicon epitaxial planar chip,metal silicon junction.
Reverse Voltage: 40 to 200 Volts
Forward Current: 5.0 Amp
RoHS Device
Company reserves the right to improve product design , functions and reliability without notice.
Dimensions in inches and (millimeter)
DO-214AC (SMA)
0.067 (1.70)
0.047 (1.20)
0.114 (2.90)
0.083 (2.10)
0.187 (4.75)
0.157 (4.00)
0.008(0.20)
0.003(0.08)
0.012 (0.30)
TYP.
0.224 (5.70)
0.185 (4.70)
0.061 (1.55)
0.030 (0.75)
0.098 (2.50)
0.067 (1.70)
