6
ATF-55143 Typical Performance Curves, continued
IIP3 (dBm)
Figure 21. Gain vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
FREQUENCY (GHz)
GAIN (dB)
0621453
28
23
18
13
8
25°C
-40°C
85°C
Figure 23. OIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
FREQUENCY (GHz)
OIP3 (dBm)
0621453
25°C
-40°C
85°C
25
24
23
22
21
20
19
Figure 24. IIP3 vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1]
FREQUENCY (GHz)
0621453
25°C
-40°C
85°C
16
14
12
10
8
6
4
2
0
-2
-4
-6
Figure 25. P1dB vs. Temperature and
Frequency with bias at 2.7V, 10 mA.
[1,2]
FREQUENCY (GHz)
P1dB (dBm)
0621453
25°C
-40°C
85°C
16
15
14
13
12
11
10
Figure 22. Fmin vs. Frequency and
Temperature at 2.7V, 10 mA.
FREQUENCY (GHz)
Fmin (dB)
0621453
2.0
1.5
1.0
0.5
0
25°C
-40°C
85°C
Notes:
1. Measurements at 2 GHz were made on a xed tuned production test board that was tuned for optimal OIP3 match with reasonable noise gure
at 2.7 V, 10 mA bias. This circuit represents a trade-o between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I
dsq
, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
dsq
, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added e ciency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V
DS
= 2.7V and I
dsq
= 5 mA, I
d
increases to 15 mA
as a P1dB of +14.5 dBm is approached.
